AL2804 Aluminium Selenide (Al2Se3) Powder (CAS 1302-82-5)

Aluminium Selenide (CAS 1302-82-5) Description

Aluminium Selenide (CAS No. 1302-82-5) is the chemical compound Al2Se3 and has been utilised as a precursor for hydrogen selenide, which is released when the solid is treated with acids. It must be stored in a manner that protects it from moisture and air, given that it is hydrolytically unstable. Heterostructures that combine III–VI semiconductors with silicon have attracted research interest due to their close lattice matching and quantifiable optoelectronic properties (Fritsche et al. 2002, Ueno et al. 2002, Zheng et al. 1996). Al2Se3 is the least studied chalcogenide of group III–VI (Schneider and Gattow 1954) in comparison with other members of the III–VI semiconductor family.

Aluminium Selenide (CAS 1302-82-5) Specifications

Aluminium Selenide (CAS 1302-82-5) Applications

Aluminium Selenide (CAS No. 1302-82-5) has been employed as a precursor for hydrogen selenide, which is released upon treating the solid with acids.

Furthermore, semiconductors based on compounds comprising elements from groups III and VI, such as aluminium selenide, are of interest both because of the physical properties associated with their intrinsic vacancy structures and due to their quantifiable suitability as potential building block materials. M2X3 compounds (with M = Al, Ga or In and X = S, Se or Te) exhibit structures derived from the zinc blende or wurtzite arrangements of tetrahedrally bonded III–V and II–VI semiconductors, although one third of the cation sites remain unoccupied. The internal vacancies in the predominant structures of Al2Se3, Ga2Se3 and In2Se3 are localised along helices (also for γ-In2Se3), lines or planes. This renders M2X3 materials such as aluminium selenide suitable for functionalisation by ordering vacancies (e.g. by generating anisotropic optical properties) and/or by occupying these vacancies with additional elements (e.g. transition metals). The lattice constants of Ga2Se3 and Al2Se3 are close to those of Si (with lattice mismatches of 0.1 and 1.3% respectively), thereby providing the possibility of combining the properties of these intrinsic vacancy materials with silicon technology.

Reference

Chih-Yuan Lu, Jonathan A. Adams, Qiuming Yu, Taisuke Ohta, Marjorie A. Olmstead and Fumio S. Ohuchi: Heteroepitaxial Growth of the Intrinsic Vacancy Semiconductor Al2Se3 on Si(111): Initial Structure and Morphology. http://faculty.washington.edu/olmstd/research/papers/Lu_Al2Se3_Si111_preprint.pdf