GR5855 CVD monolayer graphene on SiO2 substrate

Catalogue Number	GR5855
Dimensions	5cm*5cm
Material	SiO2 / Cu

Monolayer Graphene on SiO2 Substrate denotes a method for synthesising a single atomic carbon layer. Scientists arrange the carbon atoms in a hexagonal lattice. Chemical vapour deposition techniques are employed to synthesise the graphene on copper. Stanford Advanced Materials (SAM) delivers monolayer graphene meeting a measured purity above 99.5%. Our pricing undercuts the market average by approximately 15%.

INQUIRY

Description

Specification

LAST RECOMMENDATION

OX0173 Graphene Oxide Nanopowder

OX0174 Graphene Oxide (5 mg/mL, Water Dispersion)

GR0178 Graphene Oxide Water Dispersion (0.5 mg/mL)

CB0182 Carbon Nanotubes

GR0184 Graphite Electrode for EDM

GR0185 Customised graphite product manufactured to customer specifications

GR0186 Graphite Form

GR0188 Graphite rod (CAS No. 12013-82-0)

GR0189 Graphite Heater

REQUEST A QUOTE

Send us an inquiry today to learn more and receive the latest pricing. Thank you!

* Your Name

* Your Email

For prompt processing, please use your company email address.

* Product Name

* Your Phone

* Country

United Kingdom

Comments

Please enclose drawings:

Save files here or

Accepted file formats: PDF, PNG, JPG, JPEG; if uploading multiple files at once, each file must be smaller than 2 MB.

* Check Code

Specification of the Graphene Layer
Growth Method	CVD (Chemical Gas Phase Deposition)
Appearance	Transparent
Transmittance	>97%
Coverage	>95%
Layer Thickness (theoretical)	0.345 nm
AFM Thickness	<1 nm
Electron Mobility on SiO2/Si	≈1500 cm²/V·s
Sheet Resistance on SiO2/Si	350±40 Ohm/sq (1 cm x 1 cm)
Grain Size	up to 20 μm
Copper Foil Thickness	18 μm
Roughness	~80 nm
Substrate SiO2/Si
Dry Oxide Thickness	90 nm (±5%)
Type/Dopant	P/B
Orientation	<100>
Front Surface	Polished
Dielectric Constant of the SiO2 Layer	3.9

Graphene Film Specification
Growth Method	CVD (Chemical Vapor Deposition)
Appearance	Transparent
Transparency	>97%
Coverage	>95%
Thickness (theoretical)	0.345 nm
AFM Thickness	<1 nm
Electron Mobility on SiO2/Si	≈1500 cm2/V·s
Sheet Resistance on SiO2/Si	350±40 Ohms/sq (1cm x1cm)
Grain Size	Up to 20 μm
Cu Foil Thickness	18 μm
Roughness	~80 nm
Substrate SiO2/Si
Dry Oxide Thickness	90 nm (±5%)
Type/Dopant	P/B
Orientation	<100>
Front Surface	Polished
Dielectric Constant of the SiO2 layer	3.9

GR5855 CVD monolayer graphene on SiO2 substrate

CVD Monolayer Graphene Description

CVD Monolayer Graphene Specification

CVD Monolayer Graphene Applications

CVD Monolayer Graphene Packaging

Specification

SDS

LAST RECOMMENDATION

REQUEST A QUOTE

NEED HELP?

POPULAR CATEGORIES

OUR COMPANY