CVD Monolayer Graphene Description
CVD Monolayer Graphene on Cu/Copper Substrate refers to a specific method to synthesise graphene, which is a single atomic layer of carbon arranged in a hexagonal lattice, on a copper surface by using chemical vapour deposition processes.
Monolayer graphene denotes a single layer of carbon atoms arranged in a honeycomb lattice. It exhibits electrical, thermal and mechanical properties that differ from those of bulk graphite or other forms of carbon.
Copper (Cu) foils or thin films are typically used as the substrate for graphene growth via CVD. Copper facilitates the catalytic decomposition of carbon-containing gases and acts as a template for graphene formation. After synthesis, the graphene layer can be transferred from the copper substrate onto other materials for various applications.
CVD Monolayer Graphene Specification
Growth Method
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CVD (Chemical Vapour Deposition)
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Appearance
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Transparent
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Transparency
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>97%
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Coverage
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>95%
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Layer Thickness (theoretical)
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0.345 nm
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AFM Thickness
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<1 nm
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Electron Mobility on SiO2/Si
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≈1500 cm2/V-s
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Sheet Resistance on SiO2/Si
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350±40 Ohm/sq (1 cm x 1 cm)
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Grain Size
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up to 20 μm
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Cu Foil Thickness
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18 μm
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Roughness
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~80 nm
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CVD Monolayer Graphene Applications
- Electronics: As transparent, conductive electrodes in displays and solar cells.
- Sensors: Given its large surface area and sensitivity.
- Composite Materials: For enhancing mechanical strength and conductivity.
- Research: For the investigation of the fundamental properties of graphene.
CVD Monolayer Graphene Packaging
CVD Monolayer Graphene is handled with care during storage and transportation to preserve the product’s characteristics in its original state.