SC0897 Silicon Carbide Nozzle (SiC Nozzle)

Catalogue Number	SC0897
Material	SiC Ceramic
Purity	97%~99%
Density	3.05~3.15 g/cm3
Appearance	Black
Melting Point	2,730° C (4,946° F) (decomposes)
Operating Temperature	1400℃

Silicon Carbide Nozzles fulfil defined technical specifications for thermal conductivity, exhibit low coefficients of thermal expansion and resist acid corrosion. Stanford Advanced Materials (SAM) supplies and manufactures sintered SiC, reaction‐bonded SiC and recrystallised SiC. Customer‐specific modifications are available upon request.

Related products: Silicon Carbide Plate, Silicon Carbide Tube, Silicon Carbide Ball, visit more>>

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	Purity of Silicon Carbide	Max Operating Temperature (°C)	Bulk Density (g/cm³)	Porosity Appearance	Flexural Strength (MPa)	Compressive Strength (MPa)	Thermal Expansion (10⁻⁶/°C)	Thermal Conductivity (W/m.K)	Key Features
Recrystallised SiC	99.50%	1 650	2.7	<15%	110	>300	4.6 (at 1 200°C)	35 ~ 36	Temperature resistance at 1 650°C; purity at 99.50%.
Sintered SiC	98%	1 550	3.1	2.5	400	2 200	4.0 (at <500°C)	110	Fracture toughness
Reaction‐Bonded SiC	>88%	1 300	>3	0.1	380	2 100	4.4 (at <500°C)	65	Chemical resistance

	Purity of Silicon Carbide	Max. Working Temp. (`C)	Bulk Density (g/cm3)	Appearance Porosity	Flexural strength (MPa)	Compressive strength (MPa)	Thermal expansion (10^-6/`C)	Thermal conductivity (W/m.K)	Main characteristics
Recrystallized SiC	99.50%	1650	2.7	<15%	110	>300	4.6 (1200`C)	35~36	High temp. resistance. High purity
Sintered SiC	98%	1550	3.1	2.5	400	2200	4.0 (<500`C)	110	Fracture Toughness
Reaction Bonded SiC	>88%	1300	>3	0.1	380	2100	4.4 (<500`C)	65	Chemical Resistance

SC0897 Silicon Carbide Nozzle (SiC Nozzle)

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