SC0957 Silicon Carbide Trays (SiC-Trays)

Catalogue Number	SC0957
Dimensions	<40cm (15")
Material	Graphite, with CVD SiC coating
Purity	>99.99% for SiC coating
Surface finish	Zero porosity
Coating thickness	50~500μm

Stanford Advanced Materials (SAM) is a supplier and manufacturer of sintered SiC, reaction-bonded SiC and recrystallised SiC. We supply high‐purity silicon carbide plates at competitive prices. Custom modifications are available upon request.

Related products: Silicon Carbide Plate, Silicon Carbide Tube, Silicon Carbide Seal Ring, please visit more>>

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	Recrystallised SiC	Sintered SiC	Reaction Bonded SiC
Purity of Silicon Carbide	99.5%	98%	>88%
Max. Operating Temperature (°C)	1650	1550	1300
Bulk Density (g/cm³)	2.7	3.1	>3
Apparent Porosity	<15%	2.5	0.1
Flexural Strength (MPa)	110	400	380
Compressive Strength (MPa)	>300	2200	2100
Thermal Expansion (10⁻⁶/°C)	4.6 (1200°C)	4.0 (<500°C)	4.4 (<500°C)
Thermal Conductivity (W/m·K)	35–36	110	65
Key Properties	High temperature stability High purity	Fracture toughness	Chemical resistance

	Recrystallized SiC	Sintered SiC	Reaction Bonded SiC
Purity of Silicon Carbide	99.5%	98%	>88%
Max. Working Temp. (`C)	1650	1550	1300
Bulk Density (g/cm3)	2.7	3.1	>3
Appearance Porosity	<15%	2.5	0.1
Flexural strength (MPa)	110	400	380
Compressive strength (MPa)	>300	2200	2100
Thermal expansion (10^-6/`C)	4.6 (1200`C)	4.0 (<500`C)	4.4 (<500`C)
Thermal conductivity (W/m.K)	35~36	110	65
Main characteristics	High temp. resistance High purity	Fracture Toughness	Chemical Resistance

SC0957 Silicon Carbide Trays (SiC-Trays)

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