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Graphene Growth And Adherence To Silicon Wafers

Researchers from the National University of Singapore presented a method in which graphene is deposited onto silicon wafers through a controlled growth process. This process increases the efficiency of direct material transfer. Graphene grows exponentially until it completely covers the silicon surface. The method modifies the practice for applying graphene in technological applications.

Graphene on a Silicon Wafer

This method is the first to both transfer and reproduce graphene on silicon wafers and chips. It differs from the current industry practice that involves rolling liquid graphene onto silicon so that it dries. The standard method produces graphene sheets up to 30 inches long. It creates contamination and defects such as folds, cracks, and creases. In the absence of reliable techniques, material losses were accepted. Consequently, the growth and transfer method addresses these issues.

In this process, a graphene seed is affixed to a silicon substrate. The seed grows exponentially under natural conditions until it fills the available area. Graphene propagates over the growth medium until it fully coats the silicon surface. This method reduces contamination that occurs during the rolling process. Bonus research focused on silicon adhesion indicates that graphene can be used as a growth adhesion agent for other materials.

Experimental Validation

During the experimental phase, thin graphene strips were deposited on silicon-based structures. Researchers used atomic force microscopy to quantify the growth potential. In parallel, electrodes transmitted electrical charges through the growing surface to measure conductivity. This setup ensured that the final product met the necessary specifications. The concurrent experiment recorded no loss in conductivity. Consequently, the method provides a viable alternative to the previously used rolling and drying procedures.

The process is expected to impact the industry. It reduces contamination, lowers labour requirements, and is more cost effective due to reduced processing times.

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About the author

Chin Trento

Chin Trento holds a bachelor's degree in applied chemistry from the University of Illinois. His educational background gives him a broad base from which to approach many topics. He has been working with writing advanced materials for over four years at Stanford Advanced Materials (SAM). His main purpose in writing these articles is to provide a free, yet quality resource for readers. He welcomes feedback on typos, errors, or differences in opinion that readers come across.

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