OP5084 CVD Diamond Wafer

Catalogue Number	OP5084
Dimensions	1010, 1515, 20*20 (mm)
Growth Method	Microwave Plasma Chemical Vapor Deposition (MPCVD)

CVD-Diamond-Wafer are a new material with excellent optical and thermal conductivity properties. Stanford Advanced Materials (SAM) has extensive experience in the manufacture and supply of high-quality CVD-Diamond-Wafer.

INQUIRY

Description

Specification

Reviews

LAST RECOMMENDATION

CY0104 Magnesium Fluoride Crystal (MgF2-Crystal)

CY0106 Barium Fluoride Crystal

CY0474 Diffusion-bound Crystals

CY0485 Nd:Ce:YAG

CY0492 Potassium Titanyl Phosphate (KTP)

Gray Track Resistance Potassium Titanyl Phosphate (GTR-KTP)

OP0494 Grey Rail Resistance Potassium Titanyl Phosphate (GTR-KTP)

CY0495 Beta-Barium Borat

CY0496 BiB3O6 (BIBO) Crystal

CY0497 Rubidium Titanyl Phosphate (RTP)

REQUEST A QUOTE

Send us an inquiry today to learn more and receive the latest pricing. Thank you!

* Your Name

* Your Email

For prompt processing, please use your company email address.

* Product Name

* Your Phone

* Country

United Kingdom

Comments

I would like to join the mailing list to receive updates from Stanford Advanced Materials.

Please enclose drawings:

Save files here or

* Check Code

Accepted file types: PDF, png, jpg, jpeg. Upload multiple files at once; each file must be under 2MB.

Type	Optical Quality		Thermal Conductive Quality
-	Polycrystalline	Single Crystal	Polycrystalline	Single Crystal
Growth Method	MPCVD	MPCVD	MPCVD	MPCVD
Size (mm)	Φ50~Φ150	≥8 in light direction	Φ50~Φ150	≥10
Luminous Efficiency (%, 1mm thickness)	>60%@λ>500nm >70%@λ>10μm	>65%@λ>500nm >71%@λ>10μm	/	/
Absorption Coefficient (^cm-1)	<0.12@λ=1.06μm <0.07@λ=10.6μm	<0.10@λ=1.06μm <0.05@λ=10.6μm	/	/
Thermal Conductivity (W/mk@300K)	>1800	>2200	>1200	>1500
Thermal Expansion Coefficient (^10-6/K@300K)	1.0	1.0	1.0	1.0
Dielectric Constant	5.5±0.2@140GHz	/	/	/
Dielectric Loss	^<6*10-5@GHz	/	/	/
Vickers Hardness (GPa)	80	70~120	80	70~120
Thickness (mm)	≥1	/	≥0.2	≥0.1
Thickness Tolerance (mm)	±0.03	±0.03	±0.03	±0.03
Parallelism (μm/cm)	≤5	≤4	/	/
Flatness PV Value (Streak/cm@633nm)	≤1	≤1/3	/	/
Roughness (nm)	≤10	≤2	≤30	≤30
Warping (μm/cm)	≤4	/	/	/

Specifications & Tolerances
Grade	Optical Grade	Heat Sink Grade
Type	Monocrystal	Polycrystal
Wafer Size	Up to 15*15mm², or customized	2″, 3″, 4″, or customized
Grain Size	-	≤10μm
Dia. Tolerance	﹢0.1, -0mm	﹢0.1, -0mm
Thickness	0.1~2mm	0.1~2mm
Thickness Tolerance	±0.02mm @ ≤10mm ±0.03mm @10~15mm	-
Crystal Orientation	{100}	-
Surface treatment	Polished, Ra<2nm	-
Customization	Doping with different elements, surface polishing and metallization services

Physical Properties
Grade	Optical Grade	Heat Sink Grade
Type	Monocrystal	Polycrystal
Density	3.52g/cm³	3.51g/cm³
Raman Full Width at Half Maximum (FWHM)	~2.1 cm⁻¹	-
Nitrogen Concentration	<0.5 ppm	-
Thermal Conductivity	1900~2200 W/(m·K) @ 300K	1200~2000 W/(m·K) @ 300K
Transmittance	>70% @ 1064 nm	-
Refractive Index	2.379 @ 10.6 μm	-
Young's Modulus	-	1000~1100 GPa

OP5084 CVD Diamond Wafer

CVD-Diamond-Wafer Description

Specifications for CVD-Diamond-Wafer

CVD-Diamond-Wafer Applications

CVD-Diamond-Wafer Packaging

Specification

SDS

Case

CUSTOMER REVIEWS

LAST RECOMMENDATION

REQUEST A QUOTE

NEED HELP?

POPULAR CATEGORIES

OUR COMPANY