Ultrafast high-endurance memory based on sliding ferroelectrics

Title	Ultrafast high-endurance memory based on sliding ferroelectrics
Authors	Kenji Yasuda, Evan Zalys-Geller, Xirui Wang, Daniel Bennett, Suraj S. Cheema, Kenji Watanabe, Takashi Taniguchi, Efthimios Kaxiras, Pablo Jarillo-Herrero, Raymond Ashoori
Magazine	Science
Date	07/05/2024
DOI	10.1126/science.adp3575
Introduction	The capability of voltage-switchable collective electronic phenomena to persist at the atomic scale holds significant potential for compact and energy-efficient electronics, particularly in developing nonvolatile memory. This study assesses the characteristics of a ferroelectric field-effect transistor (FeFET) that employs sliding ferroelectricity within bilayer boron nitride at room temperature. Sliding ferroelectricity provides a distinct mechanism for atomically thin two-dimensional (2D) ferroelectrics, involving the modulation of out-of-plane polarisation via interlayer sliding. The FeFET device, featuring a monolayer graphene channel, achieved ultrafast switching on the nanosecond timescale and exceptional endurance exceeding 10^11 cycles, matching leading FeFET technologies. These attributes emphasise the utility of 2D sliding ferroelectrics for advancing future nonvolatile memory applications.
Quote	Kenji Yasuda, Evan Zalys-Geller and Xirui Wang et al. Ultrafast high-endurance memory based on sliding ferroelectrics. Science. 2024. Vol. 385(6704):53-56. DOI: 10.1126/science.adp3575
Element	Boron (B) , Nitrogen (N) , Carbon (C)
Topics	Smart and Functional Materials
Industry	Electronics