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GA2171 Gallium arsenide wafer (GaAs)

Catalogue Number GA2171
Material GaAs
Thickness 350 um ~ 625 um
Diameter Ø 2" / Ø 3" / Ø 4"

Stanford Advanced Materials (SAM) offers single crystal GaAs wafers produced using the two primary growth methods, LEC and VGF. Consequently, we can supply our clients with a wide range of GaAs materials that exhibit consistent electrical properties and controlled surface quality.

Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge-Wafer).

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