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Discontinued (Discontinued) GA2171 Gallium Arsenide Wafer (GaAs)

Catalogue Number GA2171
Material GaAs
Thickness 350 um ~ 625 um
Diameter Ø 2" / Ø 3" / Ø 4"

Stanford Advanced Materials (SAM) offers single crystal GaAs wafers produced by two main growth techniques: LEC and VGF method. This allows customers to select from a wide range of GaAs materials with high uniformity of electrical properties and excellent surface quality.

Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

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