AL10249 Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.5 mm

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.5 mm Description

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.5 mm is a crystalline substrate comprised of aluminium oxide (Al2O3). The specified A plane (11-20) cut yields a consistent crystallographic orientation and a smooth surface finish. The 10x10 mm size and 0.5 mm thickness facilitate integration into standard processing equipment. Its chemical inertness and thermal stability enhance its performance in electronic and optoelectronic device fabrication.

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.5 mm Applications

Electronics and Semiconductor Processing
- Used as a substrate in integrated circuit fabrication to achieve uniform thin film deposition by leveraging the wafer’s consistent crystallographic orientation.
- Applied as a base for sensor devices in high-frequency applications to control interface quality by utilising minimal surface roughness.

Optoelectronic Devices
- Employed as an optical platform in LED and laser modules to enhance light transmission by leveraging the material's inherent transparency and thermal stability.

Industrial and Research Applications
- Used as a calibration standard in materials research to secure precise measurement outcomes by leveraging defined dimensions and low defect density.

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.5 mm Packing

Each wafer is encased in a cushioned, anti-static pouch and sealed within a rigid, moisture-barrier container. The packaging is engineered to minimise particulate contamination and protect against mechanical impacts during transit. Storage recommendations include a controlled, low-humidity, temperature-stable environment. Custom packaging solutions, including compartmentalised or labelled containers, are available upon request to accommodate specific handling protocols.

Frequently Asked Questions

Q1: How does the A plane (11-20) cut affect wafer performance?
A1: The A plane (11-20) cut provides a uniform crystallographic surface that facilitates consistent thin film deposition and minimises variation in substrate properties, which is critical for precise device fabrication.

Q2: What role do the wafer dimensions play in processing compatibility?
A2: The 10x10 mm size and 0.5 mm thickness ensure the wafer fits standard semiconductor processing equipment, thereby reducing the need for modifications in handling and integration routines during device manufacturing.

Q3: What measures are used to minimise surface defects during production?
A3: The manufacturing process incorporates advanced quality control methods such as scanning electron microscopy and profilometry to inspect and verify surface uniformity, thereby reducing the incidence of micro-defects.

Additional Information

Sapphire, or crystalline Al2O3, possesses high hardness, thermal stability, and chemical inertness. These attributes support its usage as a substrate in both electronic and optoelectronic device fabrication, where minimal interference and optimal performance are critical. Its well-defined crystallographic orientations aid in achieving precise film deposition, an essential requirement in high-precision manufacturing environments.

In material science research, sapphire wafers are frequently used as calibration standards and substrates for developing novel thin-film technologies. Their unique mechanical and optical properties enable researchers to explore advanced device architectures while maintaining consistency in baseline material behaviour.