AL10294 Iron Doped Sapphire Wafer Fe: Al2O3 (0001) 10x10x0.5 mm

Iron Doped Sapphire Wafer Fe: Al2O3 (0001) 10x10x0.5 mm Description

This product is a sapphire wafer consisting of Al2O3 doped with 0.05-0.1% wt Fe, exhibiting a (0001) crystallographic orientation. The wafer measures 10x10 mm with a thickness of 0.5 mm, ensuring compatibility with standard semiconductor and crystal growth equipment. Its defined composition and orientation reduce defect density, favouring uniform epitaxial growth and surface finish. The controlled iron doping adjusts electrical and optical properties essential for high-precision applications.

Iron Doped Sapphire Wafer Fe: Al2O3 (0001) 10x10x0.5 mm Applications

1.       Electronics and Semiconductor
- Used as a substrate in epitaxial layer deposition for semiconductor devices to achieve precise crystal alignment by leveraging its uniform (0001) orientation.

2.       Optoelectronic Instrumentation
- Applied as an optical window in photonic systems to obtain stable transmission properties by capitalising on its controlled doping and low defect density.

3.       Industrial Sensors
- Used as a base material in sensor fabrication to maintain dimensional stability under variable thermal conditions by utilising its stable crystal structure.

Iron Doped Sapphire Wafer Fe: Al2O3 (0001) 10x10x0.5 mm Packing

The wafer is packaged individually in an anti-static, cushioned enclosure and sealed within a moisture-barrier bag. It is stored at room temperature in a low-humidity environment to prevent contamination and physical damage. Additional custom packaging options, including vacuum sealing and marked compartments, are available for enhanced protection during transit and storage.

Frequently Asked Questions

Q1: How does the controlled iron doping impact the wafer’s performance?
A1: The controlled addition of 0.05-0.1% wt Fe adjusts the optical and electrical properties of the sapphire wafer, ensuring a consistent impact on epitaxial layer quality and device performance while maintaining a low defect rate.

Q2: What measures are taken to confirm the wafer’s crystallographic orientation?
A2: The wafer undergoes detailed surface analysis, including electron microscopy and X-ray diffraction, to verify its (0001) orientation, which is critical for ensuring the proper alignment in subsequent processing steps.

Q3: Can the wafer dimensions be customised to suit specific equipment requirements?
A3: Yes, customisation of wafer dimensions is available. Adjustments in size and thickness can be managed based on detailed processing requirements to ensure compatibility with various deposition and etching systems.

Additional Information

Sapphire wafers composed of Al2O3 are valued in advanced processing environments for their excellent thermal stability and chemical inertness. The incorporation of iron as a dopant can modify the intrinsic properties, facilitating tailored performance in electronic and optical devices.

Understanding the precise material characteristics and processing conditions is crucial in fields such as semiconductor fabrication and advanced sensor applications. These substrates serve as critical platforms for developing high-performance devices in research and industrial settings.