CY10333 Microwave Plasma Chemical Vapour Deposition Diamond Single Crystal Substrate (100) 10x10x0.4 mm

Microwave Plasma Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 10x10x0.4 mm Description

Microwave Plasma Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 10x10x0.4 mm is fabricated from elemental carbon through a plasma-assisted deposition process. The 10x10 mm dimensions comply with standard processing equipment specifications, whilst the 0.4 mm thickness provides structural rigidity under thermal cycling. The (100) crystallographic orientation supports lattice compatibility with epitaxial layers, thus reducing interfacial stresses during device integration. Its chemical inertness minimises contamination risks in subsequent processing steps.

Microwave Plasma Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 10x10x0.4 mm Applications

1.      
Electronics
   - Used as a substrate in semiconductor devices to address heat dissipation challenges by leveraging diamond’s efficient thermal conductivity, thereby reducing thermal gradients during operation.

2.      
Photonics
   - Applied as the base for optical components in laser systems to achieve controlled light propagation by leveraging the substrate’s uniform crystalline structure, thus minimising scattering effects.

3.      
Research and Development
   - Serves as a platform in materials science experiments to reduce experimental variability by leveraging its controlled (100) orientation, ensuring consistent integration with layered device structures.

Microwave Plasma Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 10x10x0.4 mm Packing

The substrate is packaged in a clean-room grade, anti-static container with cushioned foam inserts to prevent mechanical damage. It is sealed within a dust-proof bag under controlled humidity conditions. Storage in a temperature-regulated environment is recommended to maintain crystal integrity. Custom labelling and packaging options are available to support specific handling and transport requirements.

Frequently Asked Questions

Q1: What aspects of the microwave plasma process influence the crystal uniformity?
A1: Key deposition parameters such as plasma density, gas flow rate, and substrate temperature are continuously monitored. SAM employs interferometric techniques to assess film uniformity and defect density, which helps maintain a consistent microstructure throughout the growth process.

Q2: How does the (100) crystallographic orientation affect the integration of subsequent layers?
A2: The (100) orientation promotes lattice alignment with many semiconductor films. This alignment helps reduce interfacial stresses during epitaxial growth and minimises defect introduction, facilitating improved integration of subsequent layers in device fabrication.

Q3: Are modifications to the substrate dimensions available?
A3: Yes, substrate sizes can be customised to align with specific equipment and process requirements. Adjustments are made after evaluating material compatibility to ensure that the crystalline properties remain intact throughout processing.

Additional Information

Diamond substrates produced using microwave plasma chemical vapor deposition are integral to research in advanced electronic and photonic systems. The controlled growth process enables the formation of single crystals with specific orientations, which is significant for reducing interfacial mismatches in layered devices. Detailed process monitoring and microstructural analysis are central to achieving consistency in these substrates.

Recent scientific studies emphasise the importance of precise crystallographic orientation in substrate performance. The intersection of materials science and device engineering continues to drive improvements in substrate fabrication processes, enhancing the accuracy and efficiency of experimental and production systems in various technological fields.