CY8293 Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm Description

Experience performance and reliability with our Aluminium Oxide Sapphire Crystal Substrate, featuring the Al2O3 C-plane (0001) orientation in a precise 10 x 10 x 0.5 mm dimension. Known for its hardness and thermal conductivity, this sapphire substrate delivers mechanical strength and chemical inertness, making it a suitable choice for semiconductor, optoelectronics, and high-temperature applications. Its optical transparency in the UV to near-infrared range and excellent dielectric properties expand its versatility for a wide range of research and industrial projects.

Manufactured under stringent quality controls, each substrate undergoes polishing processes to ensure minimal surface roughness and optimal flatness. This guarantees a stable platform for epitaxial growth and consistent performance across production cycles. Trust our sapphire crystal substrate to meet industry standards and achieve results in demanding technological environments.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm Applications

Aluminium oxide sapphire crystal substrates, such as the Al2O3 C-plane (0001) 10 x 10 x 0.5 mm, are valued for their thermal stability, mechanical strength, and optical clarity. Their crystalline structure ensures minimal lattice mismatch, making them suitable for thin film growth processes. These combined properties enable reliable performance in demanding conditions, supporting various industrial, research, and commercial applications.

1. Industrial Applications

·         Application 1: High-temperature furnace liners, utilising the substrate’s thermal conductivity and stability.

·         Application 2: Abrasion-resistant components for heavy-duty machinery, where hardness and durability are critical.

2. Research Applications

·         Application 1: Substrate for epitaxial film growth in semiconductor studies, benefiting from the crystal’s low lattice mismatch.

·         Application 2: Platform for advanced optics research, utilising its optical clarity and consistent refractive index.

3. Commercial Applications

·         Application 1: Sapphire windows for aerospace instrumentation, providing transparent, scratch-resistant surfaces.

·         Application 2: LED device manufacturing substrates, ensuring heat dissipation and stable performance.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm Packaging

Each Aluminium Oxide Sapphire Crystal Substrate is individually sealed in a clean, anti-static polyethylene bag to protect against particulate contamination, then secured in foam-lined storage boxes to prevent mechanical damage. They should be stored in a cool, dry, and dust-free environment, preferably under cleanroom conditions. Custom labeling and additional protective barriers are available upon request to meet specialised applications. Each substrate is shipped with handling instructions to maintain optimal purity.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm FAQs

Q1: What are the key material properties of Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm?

A1: Aluminium Oxide Sapphire (Al2O3) in the C-plane (0001) orientation exhibits optical transparency from ultraviolet to near-infrared wavelengths. With high thermal conductivity (25–35 W/m·K) and a hardness rating of 9 on the Mohs scale, it offers wear resistance and dimensional stability. Its dielectric constants are typically around 11.5 – 11.6, making it suitable for electronic and optoelectronic applications. It also demonstrates chemical stability in harsh environments.

Q2: How should this product be handled and stored?

A2: To prevent contamination and surface damage, the substrate should be handled only with clean gloves or non-metallic tweezers. Avoid contact with hard or abrasive surfaces that may cause micro-scratches. The substrate should be stored in a clean, low-humidity environment at room temperature, preferably in sealed containers or anti-static bags. Regular inspections help identify potential chips, cracks, or contamination early.

Q3: Which quality standards and certifications apply to Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm?

A3: These substrates often comply with ISO 9001 quality management systems to ensure consistent manufacturing and traceability. Suppliers may also offer documentation confirming compliance with RoHS and REACH directives, indicating low hazardous substance content. Furthermore, the substrates are subject to characterisation for crystalline quality and orientation accuracy, verified through X-ray diffraction and optical inspection. Certificates of Conformance typically accompany shipments to validate these requirements.

Related Information

1. Material Properties and Advantages

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm, stands out for its hardness and optical clarity. Due to its thermal conductivity and low dielectric losses, this substrate is particularly suitable for high-frequency device applications. Its single-crystal structure reduces internal defects, ensuring performance in challenging environments and minimizing the likelihood of cracks during handling.

Engineers value the chemical stability of this sapphire substrate, as it resists most acids and alkalis even at elevated temperatures. This durability translates into a longer operational life for devices built on its surface, making it a prime choice in industries where reliability is essential. The combination of mechanical resilience, clarity, and chemical inertness positions this substrate as a trusted solution in fields ranging from optoelectronics to aerospace systems.

2. Manufacturing Process

High-precision growth techniques are vital in producing Al2O3 C-Plane (0001) 10 x 10 x 0.5 mm substrates. Leading manufacturers often utilise methods such as the Kyropoulos or Czochralski crystal pulling processes, which allow for controlled formation of the sapphire ingots. These processes result in the uniform crystal structure required to minimise dislocations and ensure quality.

Companies employ slicing, polishing, and cleaning protocols to achieve the desired thickness of 0.5 mm while preserving the orientation accuracy of the C-plane (0001). Polishing steps promote minimal surface roughness, enabling optimal interface quality for epitaxial layers and thereby improving yields in semiconductor and optical applications.