CY8303 Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm Description

Aluminium Oxide (Al₂O₃) Sapphire Crystal Substrates offer exceptional mechanical strength, chemical stability, and high thermal conductivity, making them an ideal foundation for various high-performance applications. This R-plane (1-102) sapphire substrate features a diameter of 50.8 mm and a thickness of 0.5 mm, providing ample surface area and uniform thickness for epitaxial growth. Its unique crystallographic orientation ensures optimal properties for advanced device fabrication, including optoelectronics, high-frequency electronics, and semiconductor lasers.

Each substrate undergoes strict quality checks to verify crystal orientation, polish, and surface flatness. Manufactured to meet rigorous industry standards, it exhibits minimal defects, delivering reliable performance in even the most demanding research and commercial developments. Whether for LED production or intricate sensor arrays, this high-purity sapphire substrate delivers dependable results when precision and durability matter most.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm Applications

Aluminium Oxide Sapphire Crystal Substrate (Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm) offers mechanical strength, optical clarity, and chemical inertness. Thanks to its high thermal conductivity and low dielectric loss, it is ideal for demanding processes such as semiconductor device growth and advanced optics. Its precise orientation also supports unique epitaxial growth applications, making it indispensable across various industries and research fields.

1. Industrial Applications

·         Application 1: Ideal for high-temperature furnaces due to excellent thermal stability and resistance to wear

·         Application 2: Used in harsh chemical environments where corrosion resistance ensures equipment longevity

2. Research Applications

·         Application 1: Serves as a stable platform for R-plane oriented thin-film deposition in semiconductor development

·         Application 2: Enables precise optical experimentation and laser-based investigations thanks to minimal scattering and high clarity

3. Commercial Applications

·         Application 1: Provides strong substrates for advanced sensor technologies in consumer electronics

·         Application 2: Enhances durability of optical components used in medical and imaging devices

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm Packaging

These Aluminium Oxide Sapphire Crystal Substrates are encased in protective plastic containers with foam inserts to prevent mechanical damage. A vacuum-sealed or nitrogen-purged environment helps reduce moisture and particle intrusion. Store them in a clean, temperature-controlled area with stable humidity levels. Additional anti-contamination measures, such as sealed pouches, ensure cleanliness. Customisation options include alternative thicknesses, surface finishes, and custom sizes for specialised needs.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm FAQs

Q1: What are the key material properties of Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm?

A1: The Al2O3 R-plane sapphire substrate is known for outstanding thermal stability, high mechanical strength, excellent chemical resistance, and optimal optical transparency. Composed primarily of single-crystal aluminium oxide, it offers a Mohs hardness of 9, superior surface flatness, and a low thermal expansion coefficient. This R-plane orientation aligns crystal planes precisely for advanced epitaxy and ensures minimal lattice mismatch in molecular beam epitaxy or thin-film deposition processes.

Q2: How should this product be handled and stored?

A2: When handling these precise sapphire substrates, always use cleanroom gloves and avoid applying undue mechanical pressure to prevent scratching or chipping. Store them in antistatic, dust-free containers with supportive cushioning to maintain surface integrity. Maintain a stable environment with low humidity and minimal temperature fluctuations to reduce stress. Thorough cleaning with approved solvents or ultrapure water before use is strongly recommended.

Q3: Which quality standards and certifications apply to Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm?

A3: Manufacturers typically adhere to ISO 9001 quality management and ISO 14001 environmental management standards for consistent production and sustainability. Each batch undergoes rigorous inspection for crystallographic orientation, surface roughness, and dimensional tolerances to ensure compliance with industry benchmarks. Production often meets MIL-STD or equivalent specifications for optical flats, guaranteeing uniform thickness, minimal impurities, and stable performance for advanced semiconductor, photonic, or research applications.

Related Information

1. Manufacturing Process

Careful attention to detail is essential in producing the Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm. The high-purity alumina feedstock is meticulously melted and directional solidified using advanced crystal growth techniques, such as Czochralski or edge-defined film-fed growth. This step ensures a uniform molecular arrangement that supports consistent electrical and optical performance across the entire 50.8 mm diameter surface.

To achieve the R-plane orientation, experienced technicians employ precise slicing methods that yield substrates with the (1-102) crystalline alignment. Once cut, each wafer is lapped and polished at progressively finer levels until the surface roughness meets stringent specifications. The final result is a 0.5 mm thick substrate noted for exceptional structural integrity, making it particularly suitable for sophisticated thin-film and device fabrication processes.

2. Applications in Advanced Industries

Encompassing a wide range of fields, the Aluminium Oxide Sapphire Crystal Substrate, Al2O3 R-Plane (1-102) Dia. 50.8 mm x 0.5 mm has become an integral component in technologies. Its mechanical hardness and stable crystalline orientation improve reliability in aerospace instrumentation and a variety of laser-based optical systems. Furthermore, its low dielectric loss and high thermal conductivity render it invaluable for high-frequency microwave devices.

Several high-performance sectors employ this R-plane sapphire substrate to build strong sensor platforms and power components. Its thickness of 0.5 mm allows for intricate microfabrication steps, resulting in more efficient products. Researchers exploring innovative device architectures also capitalise on the substrate’s unique orientation, which yields optimal thin-film epitaxial growth, ultimately driving development in advanced industry applications.