CY8547 Silicon (Si) Crystal Substrate (111) Dia. 2 inch

Silicon (Si) Crystal Substrate (111) Dia. 2 inch Description

Experience enhanced performance with our Silicon (Si) Crystal Substrate (111) Dia. 2 inch, meticulously crafted for semiconductor and photonics research. The (111) crystallographic orientation delivers exceptional crystal quality, making it suitable for device fabrication such as power electronics and microelectromechanical systems (MEMS). Each substrate is polished to a mirror-like finish and maintains tight thickness tolerances, ensuring minimal defect density and stable processing conditions.

Our Silicon (111) wafers meet stringent industry and quality standards, including comprehensive inspections for surface roughness, crystal structure integrity, and dimensional precision. This commitment to excellence guarantees consistent, repeatable results in both R&D and high-volume manufacturing. Whether you are developing novel optics or integrated circuits, our Silicon (Si) Crystal Substrate (111) Dia. 2 inch provides the reliability and performance necessary.

Silicon (Si) Crystal Substrate (111) Dia. 2 inch Applications

Silicon (Si) crystal substrate (111) with a 2-inch diameter is a key material that showcases structural uniformity, defined orientation, and thermal stability. The (111) orientation provides a surface for epitaxial growth, enabling high-quality layers essential in device fabrication. With its controlled impurity level and low defect density, this substrate ensures precision and reliability across various industrial, research, and commercial applications.

1. Industrial Applications

·        Application 1: High-temperature sensor and actuator manufacturing, utilising the substrate’s thermal stability

·        Application 2: Power electronic devices, using low defect density for improved performance and longevity

2. Research Applications

·        Application 1: Quantum computing studies, capitalising on precise doping control to stabilise qubits

·        Application 2: Material science investigations, assessing crystalline growth and defect formation on (111) oriented surfaces

3. Commercial Applications

·        Application 1: Mass production of high-end integrated circuits, benefiting from structural uniformity

·        Application 2: Display technologies, using the crystalline surface for reliable epitaxial layering

Silicon (Si) Crystal Substrate (111) Dia. 2 inch Packaging

Each 2-inch diameter (111) silicon crystal substrate is individually vacuum-sealed in a protective, low-particulate poly bag, then cushioned with foam in a sturdy, cleanroom-compatible container. To prevent contamination, wear gloves when handling and store in a dry, climate-controlled environment. Additional anti-static and moisture barrier layers ensure maximum purity. Customised labeling, packaging quantities, and specialised containers are available upon request, ensuring flexibility for diverse research and production requirements.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (111) Dia. 2 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (111) Dia. 2 inch?

A1: The Silicon (Si) Crystal Substrate with a (111) orientation typically offers strong mechanical stability, high crystallographic purity, and uniform doping levels when applicable. Its diameter of 2 inches corresponds to a precise wafer standard for research and industry use. Thermal conductivity is around 150 W/mK, and the substrate usually features a thickness of 275–525 µm, ensuring compatibility with various microfabrication processes.

Q2: How should the Silicon (Si) Crystal Substrate (111) Dia. 2 inch be handled and stored?

A2: When handling the Silicon (Si) Crystal Substrate, always wear powder-free gloves to avoid contamination and fingerprints. Use plastic or Teflon tweezers to prevent scratches on the wafer surface. Store the substrate in a cleanroom-compatible container under low-humidity, dust-free conditions to minimise oxidation and particulates. Avoid sudden temperature changes, as thermal shock may cause warping or microcracks.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (111) Dia. 2 inch?

A3: Silicon (Si) Crystal Substrates typically comply with SEMI M1 standards governing wafer dimensions, surface flatness, and material purity. Additional ISO certifications, such as ISO 9001, may also apply for manufacturing consistency and quality management. Suppliers often provide a certificate of conformance, including resistivity and thickness verification. Adherence to these standards ensures reliable, reproducible results for device fabrication, semiconductor research, and other demanding applications.

Related Information

1. Material Properties and Advantages

Starting with a meticulously oriented (111) plane, the Silicon (Si) Crystal Substrate Dia. 2 inch exhibits crystalline uniformity that enhances its electronic and structural integrity. This orientation reduces lattice defects, making it suitable for device fabrication where consistency and high-reliability performance are crucial. The precise diameter of 2 inches ensures an optimal balance between device layout flexibility and cost management, while the substrate's stable thermal expansion characteristics minimise distortion during high-temperature processing.

Supported by its strong covalent bonding, this silicon crystal substrate provides a foundation that can withstand a range of demanding applications. The lower defect density of the (111) orientation promotes carrier mobility, resulting in efficient electron transport for power electronics and high-speed circuits. Additionally, its chemical stability and flat surface finish support the development of various thin-film layers, paving the way for applications in microelectromechanical systems (MEMS) and quantum devices.

2. Applications in Advanced Industries

Benefiting from low surface roughness and exceptional crystal orientation, the Silicon (Si) Crystal Substrate (111) Dia. 2 inch is widely employed in the fabrication of power transistors, sensors, and other microelectronics. Its ability to maintain structural fidelity under processing conditions makes it a candidate for integrating compound semiconductor heterostructures, thereby extending its reach into optoelectronics. This combination of thickness control and uniform doping profiles consistently delivers reliable results, a decisive factor in industries that demand consistent batch-to-batch quality.

Elaborate lithography techniques leverage the (111) silicon surface to achieve fine line resolution, paving the way for photonic and nanoelectronic components. Whether used in data communications or specialised automotive sensor systems, this substrate stands out for its consistent electrical characteristics that facilitate stable device operation. As various fields continue to adopt complex semiconductor technologies, the capacity of the (111) silicon substrate to provide smooth integration and high-yield manufacturing remains essential in advancing electronic innovation.