CY8548 Silicon (Si) Crystal Substrate (100) Dia. 3 inch

Silicon (Si) Crystal Substrate (100) Dia. 3 inch Description

Crafted from high-purity monocrystalline silicon, our (100)-oriented Silicon Crystal Substrate delivers exceptional crystalline uniformity and outstanding surface quality. With a 3-inch diameter, it is precisely engineered for minimal lattice defects, excellent thickness control, and uniform doping, making it an ideal platform for semiconductor research and development. Its low electrical resistivity and high thermal conductivity ensure effective heat dissipation and stable performance, critical for advanced microelectronics, sensors, and photonic devices.

Each substrate undergoes rigorous inspection to meet strict industry protocols and quality standards, resulting in optimal wafer flatness, low surface roughness, and high purity levels. Whether you are manufacturing integrated circuits, prototypes, or MEMS components, our Silicon (Si) Crystal Substrate serves as a reliable foundation for any high-performance application.

Silicon (Si) Crystal Substrate (100) Dia. 3 inch Applications

Silicon (Si) crystal substrates with a (100) orientation, measuring 3 inches in diameter, boast exceptional mechanical strength, thermal conductivity, and electrical characteristics. These qualities make them an ideal base for numerous advanced technologies. By delivering a consistent crystal lattice and minimal defects, these substrates support thin-film deposition, device fabrication, and more. Let us delve into key applications across industrial, research, and commercial sectors.

1. Industrial Applications

·        Semiconductor Manufacturing: The uniform crystal structure of Silicon (100) substrates is critical for producing high-performance microchips and integrated circuits.

·        MEMS Fabrication: The substrate's mechanical stability and low defect density make it suitable for building microelectromechanical systems with precise geometries.

2. Research Applications

·        Thin-Film Studies: Researchers use these substrates to investigate new materials, such as advanced dielectric or superconducting films, due to their reliable surface properties.

·        Nanoscale Characterisation: The smooth surface and well-defined crystallographic orientation facilitate high-resolution imaging and analysis in nanotechnology experiments.

3. Commercial Applications

·        Solar Cells: The high purity of Silicon (100) wafers ensures efficient light absorption for renewable energy solutions.

·        LED Manufacturing: The substrate’s excellent thermal conductivity supports effective heat dissipation, leading to consistent LED performance and extended product lifetimes.

Silicon (Si) Crystal Substrate (100) Dia. 3 inch Packaging

These 3-inch diameter (100) Silicon crystal substrates are carefully placed in robust, static-free trays lined with foam to prevent damage and scratches. Each substrate is then vacuum-sealed in cleanroom-compatible pouches to minimise moisture and particle contamination. Store in a controlled environment with stable temperature and low humidity. For additional protection, customised labelling, double-pouching, and expanded foam packaging are available upon request to meet specialised handling and transport requirements.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (100) Dia. 3 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (100) Dia. 3 inch?

A1: The Silicon (Si) Crystal Substrate in the (100) orientation with a 3-inch diameter commonly features a thickness of 375–525 µm, low resistivity (<1 Ω·cm for heavily doped wafers or higher for lightly doped), and high purity (99.9999% or greater). The single-crystal structure provides uniform electrical and mechanical characteristics, while the (100) orientation offers superior surface flatness. Thermal conductivity of around 149 W/m·K ensures efficient heat dissipation during device processing.

Q2: How should this product be handled and stored?

A2: The substrate should be handled with clean, lint-free gloves to avoid particle contamination or surface irregularities. It is recommended to store wafers in a Class 100 or better cleanroom environment, using specialised wafer carriers that minimise vibration and contact. Temperatures should remain stable between 18–24°C with relative humidity under 40–50% to prevent electrostatic discharge and preserve surface integrity over time.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (100) Dia. 3 inch?

A3: These substrates typically adhere to SEMI M1 specifications regarding diameter, thickness tolerances, surface quality, and orientation accuracy. Many manufacturers also maintain ISO 9001 certifications, ensuring consistent production processes and traceability. Additional quality checks, such as low total thickness variation (TTV) and strict defect density thresholds, help guarantee that each wafer meets stringent industry requirements for microfabrication, photovoltaics, and advanced semiconductor applications.

Related Information

1. Material Properties and Advantages

Manufactured with ultralow concentrations of metallic contaminants, the Silicon (Si) Crystal Substrate (100) Dia. 3 inch provides an ideal foundation for high-performance semiconductor devices. Its well-defined crystal orientation allows for predictable electrical behaviour and minimal defect density, resulting in enhanced carrier mobility and a reduced risk of performance-limiting dislocations. These attributes ensure that the wafer structure supports advanced lithography processes and complex deposition techniques while maintaining consistent quality across each batch.

Great care is taken in the doping processes to maintain precise resistivity ranges, ensuring that the substrate meets stringent requirements in microelectronics manufacturing. The (100) orientation, in particular, offers excellent etching uniformity and consistent wafer thickness, which is critical for forming highly precise circuit patterns. This combination of dimensional stability, low surface roughness, and mechanical strength further reinforces the substrate’s suitability for integrated circuit fabrication.

2. Applications in Advanced Industries

Leading semiconductor manufacturers utilise these 3-inch (100) orientation wafers for research and development initiatives aimed at pushing the boundaries of transistor scaling and chip performance. In specialised fields such as optoelectronics and sensor technology, the precisely oriented crystalline structure of the substrate ensures reliable signal detection and transmission, contributing to improved device sensitivity and accuracy. Moreover, this wafer’s stability under high-temperature processing expands its use in novel applications, including power electronics and microelectromechanical systems.

Additionally, the 3-inch diameter substrate accommodates a wide array of process tools and test equipment, making it a popular choice for both prototyping and small-scale production runs. Specialised coating processes and doping profiles can be applied to create customised materials for emerging nanoelectronics and quantum computing experiments. These unique capabilities highlight the substrate’s versatility across multiple sectors, ensuring it remains at the forefront of electronic device manufacturing.