CY8549 Silicon (Si) Crystal Substrate (110) Dia. 3 inch

Silicon (Si) Crystal Substrate (110) Dia. 3 inch Description

This high-quality Silicon (Si) Crystal Substrate features a (110) crystal orientation and a 3-inch diameter, making it a prime choice for advanced semiconductor research and production. Its uniformly oriented lattice structure ensures excellent carrier mobility and minimal defects, providing consistent electrical properties ideal for MEMS development, sensor fabrication, and microelectronics.

Crafted under strict quality standards, our substrate undergoes rigorous inspection for flatness, thickness uniformity, and surface polish. Its thermal stability enables high-temperature processing without compromising structural integrity. The low defect density and exceptional crystallographic accuracy ensure reproducible results in various deposition and etching processes. Whether used for research, device prototyping, or large-scale production, this Silicon (110) substrate delivers reliable performance, supporting innovation in modern electronics and optoelectronics.

Silicon (Si) Crystal Substrate (110) Dia. 3 inch Applications

Silicon (Si) Crystal Substrate (110) Dia. 3 inch offers a stable surface orientation and exceptional crystallographic properties ideal for a range of high-performance applications. The (110) orientation enables enhanced electron mobility and improved device efficiency, making this substrate a preferred choice for advanced technologies. Its precise diameter of 3 inches further ensures uniformity in thin-film processes and device fabrication.

1. Industrial Applications

·         Application 1: Microelectronic Packaging – The uniform thickness supports reliable device integration and efficient assembly in microelectronic packaging.

·         Application 2: Power Device Manufacturing – The (110) surface orientation excels in handling high voltages, boosting power electronics performance.

2. Research Applications

·         Application 1: Quantum Device Exploration – The high crystallinity fosters advanced research into novel quantum structures and devices.

·         Application 2: Photonics Studies – Its low defect density underpins investigations into optical and photonic technologies.

3. Commercial Applications

·         Application 1: Sensor Development – Enhanced electron mobility aids in creating sensitive and accurate sensor elements.

·         Application 2: Display Components – The 3-inch diameter meets industry standards for display panels and imaging systems.

Silicon (Si) Crystal Substrate (110) Dia. 3 inch Packaging

Each 3-inch Silicon (Si) Crystal Substrate with (110) orientation arrives in an anti-static polyethylene pouch enclosed within foam-lined boxes to prevent mechanical damage. The sealed packaging prevents contamination by dust and moisture. To maintain quality, store in a low-humidity environment away from direct sunlight. Additional customisation options, such as specialised packaging or labelling, are available upon request to suit specific laboratory or manufacturing requirements.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (110) Dia. 3 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (110) Dia. 3 inch?

A1: Silicon (Si) Crystal Substrate (110) with a 3-inch diameter typically exhibits high purity, precise crystalline orientation, and excellent thermal conductivity. In particular, the (110) orientation offers unique anisotropic properties that benefit advanced electronic applications. The substrate density is approximately 2.33 g/cm³, with a thermal expansion coefficient of 2.6×10^-6/K. Its surface finish is often polished to a high degree, enabling reliable device fabrication for microelectronics and MEMS.

Q2: How should this product be handled and stored?

A2: Proper handling involves wearing cleanroom gloves to prevent contamination and using grounded wrist straps to avoid electrostatic damage. Always hold the substrate by its edges to minimise contact with the polished surface. Store the silicon wafers in a clean, dry environment, preferably in specialised wafer carriers or cassettes. Maintaining stable temperature and humidity levels is crucial for preserving the substrate’s surface integrity and crystallographic properties.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (110) Dia. 3 inch?

A3: This substrate typically adheres to SEMI M1 specifications, defining material characteristics, dimensional tolerances, and surface quality. Manufacturers often maintain ISO 9001 certifications to ensure consistent quality control and traceability throughout production. Inspection follows standard metrology methods for thickness and surface flatness, and compliance with environmental directives like RoHS may be required for certain applications. These certifications help guarantee that the wafers meet rigorous industry benchmarks for performance and reliability.

Related Information

1. Material Properties and Advantages

This 3-inch diameter, (110)-oriented silicon (Si) crystal substrate is recognised for its exceptional uniformity and stable lattice arrangement, which directly contributes to higher device performance and reliability. The substrate’s orientation along the (110) plane ensures minimal dislocation density, resulting in a more consistent crystal structure that can handle elevated temperatures and high-pressure environments. Enhanced chemical purity further supports precise doping control, enabling superior electrical conduction properties essential for semiconductor applications.

Uniquely, the combination of thickness uniformity and minimal surface defects on this silicon substrate delivers excellent dielectric strength for critical manufacturing processes. This characteristic allows it to maintain dimensional stability during intricate steps, such as thin-film deposition and photolithography. The mechanical density of the (110)-oriented wafer also provides a high tolerance to mechanical stress, thereby improving longevity and reliability in electronic circuits and systems.

2. Applications in Advanced Industries

Widely utilised in the production of high-performance transistors and sensors, the Silicon (Si) Crystal Substrate (110) Dia. 3 inch is particularly valued in fields like telecommunications and aerospace. The orientation of this wafer supports lower defect rates when creating microprocessor components, ensuring that devices can operate faster with improved energy efficiency. This advantage lowers overall heat generation in integrated circuits, thereby reducing the likelihood of system failures in critical applications.

Companies focusing on micro-electromechanical systems (MEMS) and optoelectronic devices also benefit significantly from the substrate’s dependable crystallographic structure. The (110) orientation allows for more effective anisotropic etching, which is a key factor in creating precisely engineered channels and cavities for MEMS sensors and actuators. As the demand for smaller, more efficient electronic components continues to grow, this silicon substrate remains a pivotal material for research-driven activities and large-scale production in advanced technology sectors.