CY8561 Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI)

Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) Description

Experience exceptional performance with our Silicon Carbide (SiC) Wafer 2" 4H SEMI-type (HPSI). Known for its wide bandgap and outstanding thermal conductivity, this substrate provides superior power handling and supports high-frequency operation. The 4H polytype offers exceptional electron mobility, making it suitable for advanced power devices, RF applications, and high-temperature electronics. Its semi-insulating properties help minimise parasitic conduction, ensuring more efficient device operation and reduced energy loss.

Manufactured under strict quality control and in accordance with SEMI standards, each wafer undergoes rigorous inspection for thickness uniformity, low defect density, and surface quality. This ensures reliable and consistent performance, allowing engineers and researchers to push the boundaries of power electronics, telecommunications, and other demanding applications. Trust our SiC wafer for its proven durability, thermal stability, and exceptional materials excellence.

Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) Applications

Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) is known for its excellent wide bandgap, robust chemical stability, and high thermal conductivity. These key properties make it a versatile choice across various fields, enabling reliable, high-performance solutions in industrial, research, and commercial settings. With superior durability and power handling capabilities, this substrate supports innovative developments in advanced electronics and beyond.

1. Industrial Applications

·         High-temperature sensors and power control modules used in automotive production, where thermal stability and high breakdown strength are critical.

·         Corrosion-resistant components in chemical and petrochemical processing, benefiting from the wafer’s excellent chemical inertness.

2. Research Applications

·         Next-generation semiconductor prototypes focusing on wide bandgap materials, supporting studies in advanced electronics.

·         Material characterisation experiments in university and private R&D labs, leveraging the substrate’s consistent crystallographic quality.

3. Commercial Applications

·         High-efficiency power electronics in renewable energy systems like solar inverters, utilising the substrate’s superior thermal conductivity.

·         Fast-charging solutions and portable device power modules for consumer electronics, benefiting from enhanced reliability and reduced heat generation.

Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) Packaging

Each 2-inch 4H SEMI-type (HPSI) silicon carbide wafer is secured using antistatic foam inserts within a clean, sealed wafer container to prevent dust or particulate contamination. The container is then vacuum-sealed in moisture-barrier bags and labelled for traceability. Long-term storage requires a controlled environment of low humidity and stable temperature. Custom packaging solutions can be arranged to address unique shipping, handling, or storage requirements.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI)?

A1: The 4H polytype of Silicon Carbide offers a wide bandgap of about 3.26 eV, exceptional thermal conductivity, and high critical electric field strength. It also demonstrates minimal lattice defects, enabling excellent carrier mobility. These characteristics make the wafer ideal for high-power, high-frequency, and high-temperature applications. Furthermore, its high-quality crystalline structure ensures uniform doping profiles and reliable performance in advanced semiconductor device manufacturing.

Q2: How should this product be handled and stored?

A2: Silicon Carbide wafers require careful handling to avoid surface scratches and particle contamination. Use clean, non-abrasive gloves and only contact the edges when transferring. Store the wafers in a cleanroom-compatible container with minimal exposure to moisture and airborne particulates. Maintain a controlled environment with stable temperature and humidity levels. Regularly inspect the storage area for contamination risks to preserve wafer integrity.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI)?

A3: These wafers typically comply with SEMI standards M55 and M59 for SiC substrate specifications and wafer definitions. They undergo strict quality control processes, including optical inspection and electrical characterisation. Many manufacturers adhere to ISO 9001 for quality management and ISO 14001 for environmental practices. Additional certifications such as IATF 16949 are often pursued for automotive-related applications, ensuring reliability and performance consistency.

Related Information

1. Material Properties and Advantages

Merging exceptional thermal conductivity with a wide bandgap, the Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) stands out for its high temperature tolerance and superior electrical insulation. Its crystal structure is engineered to exhibit low lattice defect densities, ensuring heightened carrier mobility and consistent performance during operation. This specialised wafer also demonstrates remarkable chemical stability, making it resistant to corrosive environments and thus suitable for use in demanding conditions.

Careful control of doping levels further enhances its semi-insulating qualities, leading to reduced leakage currents and improved signal clarity. Due to consistent resistivity profiles across the 2-inch diameter, devices fabricated on this substrate exhibit stable electrical characteristics and minimal interference. In addition, the low dislocation density inherent in the 4H polytype reduces the likelihood of device failure, solidifying this wafer's reliability for advanced electronic applications.

2. Applications in Advanced Industries

Extensive research has demonstrated the HPSI 4H-SiC wafer’s effectiveness in high-voltage electronics, particularly in power switching components for energy conversion systems. Industries that demand compact yet powerful devices, such as electric vehicle manufacturers, benefit greatly from the wafer’s ability to handle rapid switching speeds with reduced power loss. This distinct advantage aligns with the increasing market need for efficient solutions that support sustainable energy goals.

Technological innovations in aerospace systems also leverage this substrate’s performance under extreme conditions. The wafer’s strong resistance to radiation and rapid heat dissipation capability ensure reliable operation in outer space applications and high-radiation environments. These unique strengths position the Silicon Carbide Wafer SiC Substrate 2 in 4H SEMI-type (HPSI) as a pivotal asset in next-generation device design and fabrication.