CY8562 Silicon Carbide Wafer SiC Substrate 2 in 6H N-type

Silicon Carbide Wafer SiC Substrate 2 in 6H N-type Description

Our 2-inch 6H N-type Silicon Carbide (SiC) wafer substrate delivers excellent performance in high-power and high-temperature semiconductor applications. With a wide bandgap, high thermal conductivity, and strong mechanical strength, this SiC material supports devices operating under extreme conditions with minimal reduction in efficiency. Its N-type doping ensures reliable current conduction and controlled resistivity, making it suitable for power electronics, high-frequency, and optoelectronic components.

Manufactured under strict quality standards, each wafer undergoes thorough inspection to guarantee uniform crystal structure, surface integrity, and precise thickness. The 6H polytype’s consistently low defect density contributes to increased device reliability and longer operational lifespans. Choose our SiC wafer substrate to take advantage of an advanced semiconductor material engineered for the most demanding industrial and research applications.

Silicon Carbide Wafer SiC Substrate 2 in 6H N-type Applications

Silicon carbide (SiC) wafers in the 6H N-type configuration deliver exceptional performance through a wide bandgap, high thermal conductivity, and strong mechanical strength. These features enable improved efficiency, reduced device size, and enhanced reliability under harsh conditions. The 2-inch diameter offers flexibility for various commercial, industrial, and research purposes, making them appropriate for applications requiring superior heat dissipation and power handling in advanced electronics and other high-performance systems.

1. Semiconductor and Electronics

·        Power Transistors: Utilise the wide bandgap for greater voltage handling and efficient power conversion.

·        High-Frequency Devices: Achieve faster switching speeds with minimal energy loss, crucial for future communication systems.

2. Medical and Analytical Instruments

·        Laser and Sensor Components: Benefit from excellent thermal stability for precise measurements and diagnostics.

·        Imaging Equipment: Leverage improved signal quality and sensitivity for clearer, more detailed results.

3. Automotive and Renewable Energy

·        Electric Vehicle Power Modules: Enhance battery charging systems and motor drives with lower energy losses.

·        Solar Inverters: Integrate into compact designs to boost efficiency in photovoltaic power conversion.

Silicon Carbide Wafer SiC Substrate 2 in 6H N-type Packaging

Our Silicon Carbide Wafer (2-inch, 6H, N-type) is packaged in sealed, anti-static containers with foam inserts to prevent mechanical shocks. A vacuum-packed barrier minimises exposure to moisture, while additional protective sleeves deter particle intrusion. Store under controlled humidity and stable temperatures, away from direct sunlight. Custom packaging options, such as double-layer enclosures or nitrogen-purged pouches, are available to meet specific contamination control requirements and ensure optimal wafer preservation.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 2 in 6H N-type FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 2 in 6H N-type?

A1: This wafer features a wide bandgap of about 3.0 eV, making it suitable for high-temperature and high-power applications. It exhibits excellent thermal conductivity of approximately 3-4 W/cm·K and a high breakdown electric field, enabling superior power-handling capabilities. The 6H polytype offers consistent crystal structure, while N-type doping ensures controlled electrical conductivity. Additionally, its exceptional chemical stability and hardness support advanced device performance.

Q2: How should this product be handled and stored?

A2: It is crucial to handle the wafer by its edges and avoid direct contact with the surface to prevent contamination or damage. Store in a clean, dry environment, ideally in an anti-static container with minimal vibration exposure. Maintaining proper humidity and temperature levels helps prevent warping or electrostatic discharge. Always use lint-free gloves and appropriate cleanroom procedures to ensure product integrity.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 2 in 6H N-type?

A3: These wafers typically conform to ISO 9001 quality management principles, ensuring consistent manufacturing procedures, lot traceability, and rigorous quality checks. Many manufacturers also adhere to ISO 14001, validating responsible environmental practices. Additional certifications may include RoHS compliance, reflecting minimal hazardous substances, and specialised semiconductor industry standards like SEMI M55, which outlines specifications for silicon carbide substrates in device fabrication.

Related Information

1. Material Properties and Advantages

This 2 in 6H N-type Silicon Carbide wafer features a stable crystal structure that enables excellent thermal conductivity and high breakdown voltage. These characteristics support reliable operation in extreme temperature conditions and help reduce thermal management requirements. Moreover, the N-type doping precisely modulates electron flow, allowing for faster switching speeds and more efficient power conversion. As a result, this wafer maintains excellent performance in environments where traditional semiconductor materials often fail.

Utilising wide bandgap properties, the 6H polytype guarantees excellent frequency response, supporting applications such as high-power transistors, diodes, and RF components. Its strong lattice structure significantly minimises defect density, enhancing device longevity and reducing potential failure rates. Overall, the blend of thermal resilience, high electron mobility, and exceptional chemical stability makes the 2 in 6H N-type Silicon Carbide wafer a valuable substrate for manufacturers seeking advanced performance in power electronics.

2. Applications in Advanced Industries

Beyond its utility in conventional power electronics, the 2 in 6H N-type Silicon Carbide wafer is sought after for aerospace and automotive solutions. Its ability to withstand intense mechanical stress while maintaining reliable electrical properties ensures stable operation in avionics, electric vehicle power trains, and satellite systems. Furthermore, the wafer’s high temperature tolerance offers reduced cooling system requirements, paving the way for lighter, more efficient designs in sectors where weight and fuel economy are important.

Coupled with its strong chemical inertness, this substrate meets critical demands in areas like renewable energy, and complex industrial machinery. In wind energy converters and solar inverters, it supports high-voltage endurance and efficient power management. By addressing these specialised needs, the 2 in 6H N-type SiC substrate proves essential for modern industries requiring both precision and durability in their electronic components.