CY8566 Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI)

Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI) Description

Experience the performance of our Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI). Engineered with high purity for semi-insulating properties, this wafer delivers outstanding thermal conductivity, wide bandgap, and chemical stability. These attributes enable performance in high-power, high-frequency, and high-temperature environments, making it suitable for advanced power electronics, RF devices, and research applications.

Manufactured in compliance with strict industry standards, including SEMI M55 guidelines, our 3-inch HPSI 4H-SiC wafers undergo rigorous quality checks to ensure minimal defects and consistent doping profiles. Their mechanical strength and low defect density provide an excellent platform for developing next-generation semiconductor devices, ensuring reliable, long-lasting performance in demanding applications.

Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI) Applications

Silicon Carbide (SiC) substrates are known for their thermal conductivity, wide bandgap, and chemical resilience. These properties make the 4H SEMI-type (HPSI) SiC wafers suitable for high-power, high-frequency, and high-temperature device applications. By delivering efficient heat dissipation and reliable performance, they support advancements in key industries while enabling research and product development. Below are three primary categories illustrating their potential.

1. Electronics and Semiconductor Applications

·         Application 1: Power Electronics – Utilised for high-voltage, high-temperature switches and inverters in energy systems, enhancing overall efficiency and reducing thermal management challenges.

·         Application 2: Radio Frequency Devices – Suitable for high-frequency components in telecommunications equipment, providing stable performance under demanding conditions.

·         Application 3: Sensor Manufacturing – Used in harsh-environment sensors for chemical process monitoring and advanced industrial controls.

2. Medical and Healthcare Applications

·         Application 1: Diagnostic Imaging Equipment – Advanced wafer properties help sustain high-precision signal processing in devices such as MRI or CT scanners.

·         Application 2: Implantable Devices – Thermal and chemical stability support reliable performance in biosensors and prosthetic technologies.

3. Renewable and Industrial Equipment

·         Application 1: Solar Inverters – Supports efficient power conversion for energy systems, improving durability under fluctuating operating conditions.

·         Application 2: Wind Turbine Control Modules – Enables high-temperature control circuitry, contributing to reliable turbine operation and increased energy output.

Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI) Packaging

Each 3-inch 4H SEMI-type HPSI Silicon Carbide wafer is carefully placed in an ESD-safe carrier, then sealed within a moisture-resistant pouch to prevent contamination. For optimal protection, store the wafers in a clean, temperature- and humidity-controlled environment (around 20-25°C, <50% RH). The double-layer protective packaging and antistatic materials minimise particle intrusion. Customisation options, including labeling and specialised protective materials, are available to meet specific handling and transport requirements.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI) FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI)?

A1: Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI) exhibits a wide bandgap of approximately 3.26 eV, enabling high breakdown voltages and low conduction losses. Its thermal conductivity (~3.7 W/cm·K) supports efficient heat dissipation in power devices. With high electron mobility, it is suitable for high-frequency applications. The HPSI grade ensures low-defect density and uniform doping, improving device reliability and performance.

Q2: How should this product be handled and stored?

A2: Due to its brittle nature, handle the wafer using non-abrasive gloves and vacuum tweezers to prevent surface contamination or mechanical stress. Store it in a clean, environment-controlled container or cassette that shields it from direct contact, particulate matter, and ambient moisture. Maintain stable temperature and humidity levels to minimise material stress. Regularly inspect and clean the storage container to preserve the wafer’s integrity and performance.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI)?

A3: These wafers generally meet SEMI M55 specifications regarding dimension tolerances, wafer geometry, and defect density. They are typically produced under ISO 9001-certified quality management systems, ensuring consistent manufacturing processes and traceability. Additional certifications, such as ISO 14001 for environmental management, may apply to production facilities. Compliance with RoHS directives can also be relevant for device integrators. Documentation and lot-based inspections validate conformity to these standards.

Related Information

1. Manufacturing Process

Bespoke fabrication methods form the foundation of creating the Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI). High-temperature reactors are utilised to deposit silicon carbide crystals layer by layer, which ensures a uniform substrate with minimal defects. During this phase, careful monitoring of chemical vapor deposition parameters helps achieve a precise crystal structure, tailored for electronic devices. The 3-inch wafer diameter is thoroughly checked for consistent thickness, optimising both mechanical stability and electrical performance.

Careful post-growth treatments follow the initial deposition to refine surface characteristics. Polishing stages reduce surface roughness, enhancing the wafer’s ability to serve in high-frequency and high-power environments. Additional processes, such as doping control, enable developers to modify electrical conductivity, providing the wafer with the properties demanded by semiconductor applications. Every step, from crystal growth to final inspection, leverages technical expertise to achieve the quality necessary for 4H SEMI-type wafers.

2. Global Market Trends

Diversified industries worldwide are increasingly relying on 4H SEMI-type SiC wafers to enhance performance in high-voltage and high-temperature applications. Countries with significant semiconductor sectors, such as Japan and the United States, are investing substantially in expanding their capacity for silicon carbide substrate manufacturing. This heightened demand is also driven by the rising adoption of electric vehicles and renewable energy systems, which both depend on components that can operate under extreme conditions without sacrificing efficiency.

Forecasts predict a steady surge in the global adoption of Silicon Carbide Wafer SiC Substrate 3 in 4H SEMI-type (HPSI) products. As more companies incorporate these substrates in emerging technologies like 5G infrastructure and smart power grids, market resilience and supply chain stability become paramount. Collaborative efforts among international research institutions and wafer suppliers are paving the way for enhanced product availability, fostering an environment of innovation that prioritises durability, speed, and overall device longevity.