CY8570 Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI)

Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) Description

Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) provides a base for high-performance electronic and optoelectronic applications. Known for its high thermal conductivity, wide bandgap, and significant breakdown voltage, this material facilitates efficient heat dissipation and reliable operation under extreme conditions. Its high purity semi-insulating (HPSI) quality further improves device performance by minimising parasitic conduction paths and reducing electrical interference.

Manufactured to stringent SEMI standards, each 4H-SiC wafer undergoes thorough quality control to ensure consistent thickness, flatness, and surface integrity. This precise fabrication allows for optimal crystal structure and minimises defects, making it suitable for power electronics, RF devices, and advanced semiconductor research. Engineers and researchers can trust this high-quality SiC substrate for applications that demand durability, efficiency, and reliability.

Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) Applications

This 4-inch 4H SEMI-type Silicon Carbide (SiC) wafer (HPSI) stands out for its high thermal conductivity, wide bandgap, and excellent chemical stability. These attributes make it suitable for advanced electronics, high-power components, and specialised industrial manufacturing. Additionally, its high mechanical strength and low defect density enable improved device performance, reliability, and longevity, allowing for various commercial, research, and industrial applications.

1. Industrial Applications

·         Automotive Manufacturing: Utilised in high-temperature power electronics for electric vehicles, enhancing efficiency and durability of power modules.

·         Chemical Processing: Offers excellent corrosion resistance in harsh environments, supporting more stable and durable reactor components.

2. Research Applications

·         Semiconductor Innovation: Serves as a foundation for developing power devices that operate at higher voltages and temperatures.

·         Materials Science Studies: Enables exploration of wide bandgap semiconductor properties, advancing knowledge in high-frequency and high-power device optimisation.

3. Commercial Applications

·         Telecommunications Infrastructure: Improves high-frequency circuitry for reliable, high-speed data transmission equipment.

·         Renewable Energy Systems: Supports enhanced energy conversion efficiency and thermal management in solar inverters, contributing to cleaner power generation solutions.

Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) Packaging

Each Silicon Carbide Wafer (4-inch 4H SEMI-type, HPSI) is individually sealed in an anti-static, vacuum-sealed bag situated inside a rigid wafer cassette. A layer of corrosion-resistant film protects against moisture ingress, while nitrogen-filled storage ensures a low-humidity environment. Customisable packaging options, including specialised cassettes and labelled vacuum pouches, are available. All handling areas comply with strict cleanroom standards to minimise contamination risk and ensure product integrity.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI)?

A1: Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) typically shows high thermal conductivity, low coefficient of thermal expansion, excellent mechanical strength, and wide bandgap. It also exhibits high chemical stability and significant breakdown voltage, making it suitable for high-temperature and high-power applications. The 4H polytype structure contributes to its unique electrical properties by providing higher electron mobility, which is beneficial for power electronic devices needing high efficiency and reliability.

Q2: How should this product be handled and stored?

A2: When handling Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI), operators should use cleanroom gloves and ensure the environment is free from contamination. Direct contact with fingers must be avoided to prevent particle accumulation or scratches. The wafers should be stored in static-free, temperature-controlled containers or cassettes with limited exposure to atmospheric changes. Proper labelling, careful stacking, and maintaining low humidity conditions are essential to preserving wafer quality.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI)?

A3: Silicon Carbide Wafer SiC Substrate 4 in 4H SEMI-type (HPSI) typically adheres to SEMI M55 standards, which define specifications for SiC wafer diameter, thickness, and surface quality. Manufacturers also often follow ISO 9001 for quality management systems, ensuring product consistency and traceability. Additional certifications, such as RoHS compliance and CE marking, may apply depending on specific end-use requirements or regional regulatory guidelines.

Related Information

1. Material Properties and Advantages

Tailored for advanced power and radio-frequency applications, the 4-inch 4H SEMI-type (HPSI) Silicon Carbide wafer displays a wide bandgap that supports high thermal stability and strong electric breakdown fields. These characteristics enable the substrate to handle elevated operating voltages, making it particularly useful in power converters and switching devices where efficiency and reliability are paramount. Furthermore, the crystalline structure of 4H-SiC allows for enhanced electron mobility, which contributes to faster device performance and reduced energy losses compared to alternative semiconductor materials.

Combining high purity with a semi-insulating nature, the wafer ensures excellent isolation between active device regions, effectively minimising crosstalk and leakage currents. This property is crucial for communication systems and sensor technologies that require precise signal control. The 4-inch diameter format provides a larger surface area for device fabrication, ultimately enabling higher yields and lower production costs for manufacturers specialising in high-frequency circuits and power electronics.

2. Applications in Advanced Industries

Utilising strong thermal conductivity alongside a robust chemical structure, the 4-inch 4H SEMI-type (HPSI) Silicon Carbide wafer experiences widespread use in aerospace systems and energy distribution networks. By maintaining stable operation across broad temperature ranges, these wafers are suitable for deployment in satellites and deep-space missions that demand durable and efficient semiconductor components. Additionally, their resilience to radiation damage enhances reliability in challenging environments where conventional materials may fail prematurely.

Advancing renewable energy, this SiC substrate is integral to solar inverters and wind turbine controllers. As the global market shifts towards greener energy sources, the ability to optimise power handling and reduce conversion losses becomes vital. Consequently, many high-voltage industrial battery systems leverage the wafer's enhanced breakdown voltage to form compact, high-efficiency power modules, meeting the demands of modern sustainable power infrastructures.