CY8571 Silicon Carbide Wafer SiC Substrate 4 in 6H P-type

Silicon Carbide Wafer SiC Substrate 4 in 6H P-type Description

Our 4-inch 6H P-type Silicon Carbide (SiC) wafer substrate is engineered for high durability and performance in high-power and high-temperature applications. With a wide bandgap, excellent thermal conductivity, and high breakdown voltage, this material offers efficiency and reliability in demanding electronic environments. The 6H polytype structure contributes to consistent electrical properties, ensuring stable performance under extreme operating conditions.

Manufactured to rigorous quality standards, our SiC wafers undergo comprehensive inspection and testing to deliver uniform doping, low defect density, and exceptional surface flatness. These controls yield substrates suitable for advanced power devices, microwave electronics, and research and development. Whether developing transistors or seeking improvements in system efficiency, our Silicon Carbide wafers provide a quality foundation for innovation.

Silicon Carbide Wafer SiC Substrate 4 in 6H P-type Applications

Silicon Carbide (SiC) wafers in the 4-inch 6H P-type configuration are suitable for a variety of industries due to their chemical stability, wide bandgap, and high thermal conductivity. These properties enable devices to function under high temperatures and harsh operating environments, making them necessary in sectors such as electronics, renewable energy systems, and advanced manufacturing processes.

1. Electronics and Semiconductor Applications

·         High-performance power electronics for industrial controllers, motor drives, and inverters, providing improved efficiency and heat resistance.

·         Advanced sensing devices that operate in extreme conditions, making them suitable for harsh or high-temperature industrial environments.

2. Energy and Renewable Systems

·         Solar power inverters that handle higher power densities and reduce energy losses.

·         Wind turbine control modules with enhanced reliability in variable and challenging operational scenarios.

3. Medical and Healthcare Equipment

·         Diagnostic imaging devices requiring stable operation and minimal heat generation.

·         Wearable monitoring sensors that benefit from the wafer’s durability and thermal stability for accurate long-term patient tracking.

Silicon Carbide Wafer SiC Substrate 4 in 6H P-type Packaging

These wafers are individually packed with an ESD-safe, foam-lined carrier, then sealed in an airtight, moisture-resistant pouch. They are stored in a controlled environment with stable humidity, temperature, and cleanliness levels to prevent contamination. Anti-static and cleanroom-compatible gloves are recommended when handling. We offer customisation options in packaging and labeling, ensuring efficient storage, clear identification, and protection against dust, scratches, and electrostatic discharge.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 4 in 6H P-type FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 4 in 6H P-type?

A1: This wafer belongs to the 6H polytype of silicon carbide, known for its wide bandgap of approximately 3.0 eV and high thermal conductivity of about 4.9 W/cm·K. It features excellent electron mobility, a high breakdown electric field, and mechanical hardness. The P-type doping is typically achieved using aluminium, providing stable electrical characteristics. The wafer exhibits a low defect density, uniform crystal structure, and strong chemical stability under most operating conditions.

Q2: How should this product be handled and stored?

A2: Handle the wafer only in a cleanroom environment to minimise contamination, using non-abrasive gloves or tweezers with protective tips. Avoid direct contact with the wafer surface, and keep it free from moisture or particulates by storing it in a vacuum-sealed or nitrogen-purged container. Maintain stable temperature and humidity levels to prevent thermal shocks, which could cause microcracks and degrade device performance over time.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 4 in 6H P-type?

A3: These wafers typically comply with ISO 9001 for manufacturing quality management and SEMI M55 guidelines for semiconductor materials. They often meet RoHS and REACH directives for hazardous substances and chemical safety. Manufacturers also apply stringent in-house metrology protocols to verify resistivity, doping uniformity, and defect density. Lot acceptance tests may include surface inspection, thickness measurement, and electrical characterisation to ensure consistent, high-quality substrates.

Related Information

1. Material Properties and Advantages

Engineered to deliver high electrical and thermal performance, the 4-inch 6H P-type Silicon Carbide (SiC) wafer stands out for its wide bandgap and high heat conductivity. The wafer’s crystalline integrity supports high-voltage applications requiring minimal leakage current, making it particularly useful for power conversion and high-frequency device development. Manufacturers value the longevity of this substrate, as its structure resists degradation even under extreme operating temperatures.

Positioned for use in high-voltage applications, this substrate’s doping characteristics ensure efficient conduction while maintaining minimal power losses. Its stable hexagonal crystal structure contributes to improved electron mobility, enabling higher switching speeds and lower electronic noise. Additionally, the uniquely arranged SiC lattice reduces defect formation, thereby extending device lifespans and enhancing reliability in demanding electronic systems.

2. Applications in Advanced Industries

Adopted across a range of sectors, the 6H P-type SiC wafer’s doping control supports power conversion modules in electric vehicles, industrial motor drives, and renewable energy systems. Its high breakdown voltage and thermal management properties allow engineers to maximise overall efficiency without compromising performance. The precise crystalline orientation inherent in the 6H polytype also facilitates stronger bonding at the semiconductor-device interface.

From automotive power modules to satellite communication devices, manufacturers value this wafer’s resilience in high-temperature and high-frequency operations. Its ability to handle substantial electrical loads makes it an ideal substrate for power electronics, ensuring reliability and reduced form factors. By combining thermal stability with charge carrier mobility, 4-inch 6H P-type SiC wafers continue to drive innovation in modern engineering applications.