CY8580 Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI)

Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI) Description

Our 12-inch, 4H Silicon Carbide (SiC) Substrate is meticulously engineered to deliver exceptional material properties essential for next-generation power and high-frequency semiconductor devices. Featuring high purity semi-insulating (HPSI) technology, this wafer boasts outstanding thermal conductivity, excellent chemical stability, and superior electron mobility. These attributes help minimise power losses and increase efficiency in demanding applications, making it ideal for advanced power electronics, RF amplifiers, and high-voltage switching systems.

Each substrate is manufactured in compliance with strict SEMI standards, ensuring consistent thickness, low defect density, and exceptional surface quality. Rigorous in-house inspections and tight process controls guarantee reproducible performance and reliability. By choosing our 4H SiC Substrate, you gain access to a cutting-edge material designed to support high-performance device manufacturing and enable technological breakthroughs in wide bandgap semiconductor applications.

Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI) Applications

Silicon Carbide (SiC) 4H SEMI-type HPSI 12-inch substrates stand out for their exceptional thermal conductivity, chemical stability, and wide bandgap capabilities. These distinguishing features enable superior performance in high-power and high-frequency applications, rendering them indispensable across various civilian industries. Ideal for harsh environments, these substrates form the foundation for next-generation electronics, renewable energy systems, and other cutting-edge commercial endeavours.

1. Electronics and Semiconductor Applications

·         Application 1: Fabrication of high-voltage diodes and transistors for efficient power management in advanced electronic circuits

·         Application 2: Production of high-frequency components in telecommunications equipment for faster data transmission

2. Medical and Healthcare Technology

·         Application 1: Development of ultra-precise sensors and diagnostic tools that benefit from the substrate’s chemical stability

·         Application 2: Creation of compact, high-performance imaging devices designed for accurate patient diagnostics

3. Renewable Energy and Industrial Systems

·         Application 1: Integration in solar inverters and power converters for improved efficiency and thermal management

·         Application 2: Use in high-temperature machinery and chemical process equipment for enhanced durability and reliability

Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI) Packaging

Each 12" 4H SEMI-type HPSI Silicon Carbide wafer is carefully secured in an ESD-safe wafer carrier lined with foam to safeguard against mechanical shock. Double-layer anti-static bags and sealed pouches prevent moisture ingress and particle contamination. Storage is recommended in a cleanroom environment, maintaining 40–60% humidity and stable temperatures. Custom labeling, barcoding, or specialised packaging options are available upon request, ensuring the highest level of protection and traceability.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI) FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI)?

A1: The Silicon Carbide (SiC) 12-inch 4H SEMI-type (HPSI) wafer is renowned for its high thermal conductivity, wide bandgap (around 3.26 eV), and excellent chemical stability. Its hexagonal (4H) crystal structure provides superior electron mobility, making it ideal for high-frequency and high-power applications. Additionally, its low defect density and semi-insulating properties allow for stable device performance, reduced signal interference, and enhanced overall reliability.

Q2: How should this product be handled and stored?

A2: To maintain substrate integrity, it is crucial to handle the wafer with cleanroom gloves and use non-metallic tweezers or wafer holders to minimise particle contamination. Avoid exposing it to direct sunlight or extreme temperatures, and keep it in a secure, static-free container. Store the wafer in a low-humidity environment to prevent moisture-related defects, ensuring consistent surface quality and prolonged product viability.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI)?

A3: Silicon Carbide Wafer SiC Substrate 12 in 4H SEMI-type (HPSI) typically conforms to SEMI M55 standards, which define parameters such as dimension tolerances, surface quality, and wafer orientation. Manufacturers often maintain ISO 9001 certification to ensure quality management practices. Additional testing may include defect inspection via X-ray topography or photoluminescence, ensuring minimal micropipe density and high crystal uniformity. These measures guarantee reliable performance and meet industry-specific requirements.

Related Information

1. Manufacturing Process

Manufacturing a 12 in 4H SEMI-type (HPSI) silicon carbide wafer involves a refined crystal growth procedure that ensures high-purity, semi-insulating characteristics. First, specialised equipment is tasked with controlling temperature and pressure parameters, allowing the SiC material to form in uniform layers. This technique, often facilitated by chemical vapour deposition, creates a substrate with extremely low defect density. As a result, the wafer gains the structural integrity required for high-performance electronic applications.

During post-growth, precision slicing and polishing steps are carefully implemented to achieve the desired thickness and surface smoothness. Different levels of inspection check for any microcrystals or surface irregularities, ensuring minimal stress and superior durability. These meticulous finishing procedures are essential to produce the 12-inch format in compliance with SEMI standards, thereby paving the way for consistent device yields and enhanced reliability.

2. Applications in Advanced Industries

Advanced power conversion systems rely on the electrical properties of the 4H SEMI-type (HPSI) wafer for components such as high-voltage diodes and transistors. The excellent thermal conductivity of silicon carbide enables these devices to operate efficiently under high stress, minimising the need for bulky cooling systems. Furthermore, the wafer’s superior breakdown field strength supports ultra-fast switching speeds, which is invaluable in power modules for electric vehicles and renewable energy technologies.

Key aerospace and communication sectors also employ these large-diameter SiC wafers to achieve faster data transfer and higher operational stability. Because of their inherent resilience to radiation, they are well-suited for satellite and deep-space initiatives where device longevity is paramount. The improved performance under extreme conditions benefits critical mission components while setting new benchmarks in demanding scientific research applications.