CY9432 Silicon Wafer with 50 nm Gold Dia. 100 mm x 525 μm thick

Silicon Wafer with 50 nm Gold Dia. 4 inch x 525 μm thick Description

This silicon wafer features a 50 nm gold layer deposited on a four-inch wafer with a thickness of 525 μm. The gold film is applied using a calibrated physical vapour deposition technique that achieves uniform coverage. The thickness and diameter comply with standard semiconductor fabrication specifications, ensuring compatibility with common processing equipment. The inert gold layer serves as an effective conductive interface and a barrier against oxidation during device manufacturing.

Silicon Wafer with 50 nm Gold Dia. 4 inch x 525 μm thick Applications

Electronics and Semiconductor
- Used as metallisation in microelectronic circuits to improve signal conduction by leveraging its uniform gold coating.
- Applied as a substrate in integrated circuit fabrication to reduce contact resistance through controlled film deposition.

Sensors and Optoelectronics
- Serves as a conductive layer in sensor arrays to minimise oxidation by utilising the inert nature of the gold layer.
- Employed in photodetector modules to secure stable electrical interfaces with uniform thickness profiles.

Silicon Wafer with 50 nm Gold Dia. 4 inch x 525 μm thick Packing

The wafer is packaged in an antistatic container with foam cushioning to absorb shocks and prevent mechanical damage. A moisture barrier and contamination controls are integrated within the packaging to protect the gold surface. The container is designed for controlled storage conditions that avoid temperature fluctuations. Custom packaging options, including thermal insulation and specific labelling, are available upon request.

Frequently Asked Questions

Q1: How does the gold deposition process affect the wafer’s performance in semiconductor fabrication?
A1: The physical vapour deposition technique ensures a uniform 50 nm gold coating, which provides consistent electrical conductivity and surface passivation. The precise control over film thickness minimises contamination and surface irregularities, which is essential for subsequent photolithography and etching processes.

Q2: What storage conditions are recommended to maintain the wafer’s surface integrity?
A2: The wafer should be stored in a controlled environment with stable temperature and low humidity. The antistatic and moisture-protected packaging helps limit particulate contamination and chemical exposure, ensuring that the gold layer remains intact and functional over time.

Q3: Can modifications to wafer size or metal thickness be accommodated for specific fabrication requirements?
A3: Customisation options are available for adjusting dimensions or metal thickness. Technical support can advise on feasible modifications to align with standard semiconductor processing tolerances while maintaining the integrity of the deposition process.

Additional Information

Silicon wafers form the essential substrate in integrated circuit manufacturing. The precision in wafer fabrication, including surface treatments and controlled deposition of conductive films, directly influences device yield and performance. Detailed control over deposition parameters ensures that the metallisation layer supports effective bonding and low-contact resistance.

Metallisation with gold is widely employed in semiconductor fabrication due to its chemical inertness and excellent conductivity. The thin-film deposition processes used for these coatings are optimised to reduce particulate contamination and achieve uniform layering. This controlled approach underpins consistent performance in subsequent manufacturing steps and contributes to improved device stability over extended usage periods.