CY9433 Silicon Wafer with 100 nm Gold Dia. 4 inch x 525 µm thick

Silicon Wafer with 100 nm Gold Dia. 4 inch x 525 μm thick Description

Silicon Wafer with 100 nm Gold Dia. 4 inch x 525 μm thick comprises a silicon substrate uniformly coated with a 100 nm gold film using controlled physical vapour deposition. The 4-inch diameter paired with a 525 μm thickness ensures compatibility with standard semiconductor processing equipment. The gold layer provides low electrical resistivity and chemical inertness, making it suitable as a test platform for electrical measurements and adhesion studies in substrate prototyping.

Silicon Wafer with 100 nm Gold Dia. 4 inch x 525 μm thick Applications

1.       Electronics
   - Used as a substrate in integrated circuit fabrication to achieve defined electrical performance by leveraging the uniform gold coating.
   - Applied in sensor calibration setups to reduce contact resistance by utilising the consistent metal film properties.

2.       Research and Development
   - Employed as a test wafer in process optimisation to monitor deposition uniformity by taking advantage of the accurately controlled gold layer.
   - Frequently used as a reference material in surface studies to evaluate bonding and adhesion characteristics by leveraging the chemically inert gold interface.

Silicon Wafer with 100 nm Gold Dia. 4 inch x 525 μm thick Packing

The wafer is protected in an anti-static container with a foam insert to mitigate mechanical shock and contamination. It is enclosed in a nitrogen-purged pouch to minimise oxidation and particulate exposure. The packaging incorporates edge protection and permits customised labelling options. These measures help maintain the substrate’s integrity during transit and long-term storage in controlled environments.

Frequently Asked Questions

Q1: How do you verify the uniformity of the 100 nm gold coating?
A1: The gold layer thickness is confirmed using X-ray reflectometry and atomic force microscopy. These measurement techniques provide quantitative data on film uniformity, which is essential for ensuring proper electrical behaviour in semiconductor applications.

Q2: What surface roughness is observed on these wafers?
A2: Surface roughness is characterised via atomic force microscopy, typically showing sub-nanometre variations. Low surface roughness supports uniform film deposition and consistent interface properties for device fabrication.

Q3: How does the packaging protect the wafer during handling and shipping?
A3: The wafer is secured in an anti-static, nitrogen-purged container with foam inserts to cushion against shock and prevent particulate contamination. These measures help preserve the wafer’s surface condition and structural integrity throughout transportation.

Additional Information

Silicon wafers serve as a fundamental platform in semiconductor device fabrication, supporting various deposition and lithographic processes. The application of a thin gold film enhances electrical conductivity and chemical stability, factors essential for precise electrical measurements and bonding studies in research environments.

Gold deposition onto silicon requires stringent control over deposition conditions and adhesion layers. Techniques such as X-ray diffraction and atomic force microscopy are routinely employed to assess film integrity. Understanding these material interactions contributes to improved process control and device performance in microelectronics.