CY9434 Silicon Wafer with 100 nm Gold Dia. 2 inch x 525 μm thick

Silicon Wafer with 100 nm Gold Dia. 2 inch x 525 μm thick Description

This product consists of a crystalline silicon wafer, uniformly coated with a 100 nm gold layer via sputtering. The 2-inch diameter and 525 μm thickness align with standard semiconductor tooling, providing compatibility with established processing equipment. The gold layer improves electrical conductivity while offering chemical inertness. Its controlled deposition minimises film stress and surface anomalies, ensuring precise performance for advanced microelectronic and sensor device fabrication.

Silicon Wafer with 100 nm Gold Dia. 2 inch x 525 μm thick Applications

Electronics and Semiconductor Manufacturing
- Used as a conductive layer in integrated circuits to achieve stable electrical contacts by utilising the inert properties of gold.
- Applied in sensor devices to ensure low-resistance pathways by leveraging the uniform deposition on silicon substrates.

Industrial Microfabrication
- Serves as a substrate in MEMS devices to maintain dimensional stability and consistency by taking advantage of standard wafer dimensions.
- Frequently used in research settings to develop prototypes that require precise gold interlayers for improved signal integrity.

Silicon Wafer with 100 nm Gold Dia. 2 inch x 525 μm thick Packing

The wafer is packaged individually in a cushioned, anti-static container to prevent mechanical damage and electrostatic discharge. It is sealed in moisture-barrier polyethylene and supported by custom foam inserts. Recommended storage in a temperature-controlled, low-humidity environment minimises contamination and oxidation. Packaging can be customised with additional labelling and compartmentalisation to suit specific handling requirements.

Frequently Asked Questions

Q1: What inspection methods are utilised to ensure the uniformity of the 100 nm gold layer?
A1: Surface uniformity is verified using scanning electron microscopy (SEM) and atomic force microscopy (AFM). These techniques detect any deviations in film thickness or microstructural defects, ensuring the deposition process meets precise engineering tolerances.

Q2: How does the 525 μm thickness impact the wafer’s performance during processing?
A2: The 525 μm thickness provides mechanical stability, minimising warpage during thermal cycling and enabling compatibility with standard wafer processing equipment. This dimension helps maintain structural integrity during subsequent microfabrication steps.

Q3: Are there specific handling procedures recommended for the gold-coated silicon wafer?
A3: Yes, it is advisable to handle the wafer with anti-static tools in a clean environment. Minimising direct contact prevents particle contamination and surface damage, which is critical for maintaining the integrity of the gold layer during further processing.

Additional Information

Silicon wafers are foundational components in semiconductor technology due to their well-characterised material properties and compatibility with a wide range of deposition processes. The integration of a gold layer, precisely controlled in thickness, adds beneficial electrical and surface characteristics, which are essential for enhancing interconnect performance in microelectronic devices.

Understanding the material interactions between silicon and thin metallic films is key in developing advanced devices. The interplay of thermal expansion, adhesion properties, and deposition quality are critical factors in the long-term reliability of electronic components and sensor arrays.