CY9484 200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-50 ohm·cm

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-50 ohm·cm Description

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-50 ohm·cm is a silicon substrate engineered with controlled boron doping and a (100) orientation. The SSP designation indicates single-side polishing for enhanced surface smoothness. Precise electrical resistivity adjustment (1-50 ohm·cm) makes this substrate suitable for integrated circuits and other semiconductor devices, ensuring consistent performance in dopant-sensitive process environments.

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-50 ohm·cm Applications

1.       Electronics and Semiconductor Manufacturing
   - Used as a base substrate in integrated circuit fabrication to achieve uniform electrical characteristics by leveraging its controlled boron doping.
   - Applied as a platform for sensor devices in semiconductor systems to attain precise signal modulation through its (100) crystallographic orientation.

2.       Optoelectronics and Photovoltaic Devices
   - Employed as an active layer in photodetectors to improve charge carrier consistency by utilising its defined resistivity range.
   - Used in solar cell production to enhance carrier collection efficiency by taking advantage of its high surface uniformity and single-side polished finish.

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-50 ohm·cm Packing

Each wafer is secured in an anti-static carrier and cushioned with foam inserts to minimise mechanical stress and surface contamination. The substrates are enclosed in moisture-resistant packaging with an inert atmosphere and are labelled for tracking. They should be stored in a temperature-controlled, cleanroom environment to preserve their electrical and surface characteristics. Custom packaging configurations are available to suit specific manufacturing requirements.

Frequently Asked Questions

Q1: How does the controlled boron doping affect process integration?
A1: The controlled boron concentration ensures that the electrical resistivity remains within the 1-50 ohm·cm range, facilitating predictable performance during device fabrication and improving integration with standard semiconductor processing equipment.

Q2: What handling precautions are recommended to maintain substrate integrity?
A2: It is advised to use cleanroom procedures with anti-static handling tools and wear appropriate contamination control garments. This minimises surface damage and particulate contamination, thereby maintaining substrate performance.

Q3: Which inspection techniques are best for evaluating substrate uniformity?
A3: High-resolution optical microscopy and surface profilometry are recommended to assess dopant distribution and surface polish quality. These techniques provide precise data on uniformity and defect density for process control.

Additional Information

Silicon wafer substrates are fundamental elements in semiconductor device fabrication. Detailed control over doping and crystal orientation is essential for optimising device performance, as minor variations can affect electrical behaviour and yield. Understanding the material properties and processing techniques is key for R&D engineers and procurement specialists aiming to incorporate these substrates into advanced production lines.

The role of substrate materials extends to numerous applications within electronics and optoelectronics. Employing targeted quality control methods, such as high-resolution inspection and precise dopant analysis, helps mitigate defects and improve device uniformity. This technical insight benefits stakeholders by aligning material properties with process capabilities in modern semiconductor manufacturing.