CY9489 300 mm P Type (B-doped) Silicon Wafer Substrate Test Grade (100), DSP, 1-100 ohm·cm

300 mm P Type (B-doped) Silicon Wafer Substrate Test Grade (100), DSP, 1-100 ohm·cm Description

The substrate is fabricated from high-purity silicon using controlled boron doping, yielding a resistivity range of 1-100 ohm·cm. The (100) crystallographic orientation enhances uniformity, while DSP treatment reduces surface defects critical for semiconductor test-grade applications. Its 300 mm diameter assures compatibility with current semiconductor manufacturing equipment, supporting accurate resistivity measurements and process validation.

300 mm P Type (B-doped) Silicon Wafer Substrate Test Grade (100), DSP, 1-100 ohm·cm Applications

Electronics and Semiconductor Applications
- Used as a substrate in semiconductor metrology systems to achieve accurate resistivity profiling by leveraging controlled boron doping and precise DSP treatment.
- Applied in process development tools to facilitate consistency in doping studies by utilising the uniform (100) orientation for reliable test outcomes.

Materials Research
- Utilised in diffusion studies within research laboratories to achieve reproducible results by exploiting its stable resistivity range and reduced surface defects.
- Employed in experimental setups for evaluating semiconductor fabrication techniques to ensure high-fidelity material characterisation.

300 mm P Type (B-doped) Silicon Wafer Substrate Test Grade (100), DSP, 1-100 ohm·cm Packing

The wafer is individually sealed in anti-static carriers and positioned within moisture-controlled, inert gas-purged packaging. Custom foam inserts protect against mechanical shock and vibration during transit. Storage requires a clean, low-humidity environment to prevent surface oxidation and contamination. Custom packaging options, including specialised labelling and compartmentalisation, are available upon request to meet specific handling requirements.

Frequently Asked Questions

Q1: How does the DSP treatment influence substrate performance in semiconductor testing?
A1: The DSP process reduces surface defects and irregularities, which minimises scattering effects during metrology. This contributes to stable resistivity readings and consistent test outcomes even under varying processing conditions.

Q2: What measures ensure the controlled boron doping levels across the wafer?
A2: Inline process controls and high-resolution inspection techniques monitor boron diffusion during fabrication. These methods verify that the resistivity remains within the 1-100 ohm·cm range, crucial for test-grade applications.

Q3: Which storage conditions are recommended for maintaining wafer integrity?
A3: Wafers should be stored in a temperature-controlled, low-humidity environment to avoid oxidation. Protective, anti-static packaging further ensures the surface remains free from contaminants and mechanical damage.

Additional Information

Silicon wafers serve as the foundational substrate for semiconductor devices due to their dependable electrical properties and compatibility with microfabrication technologies. Advances in doping processes and surface treatment techniques have improved yield and performance in production environments.

The integration of DSP treatment and controlled crystallographic orientation in wafer manufacturing supports precise test-grade applications. This approach not only enhances measurement accuracy but also contributes to the broader development of semiconductor processing innovations within both commercial and research settings.