CY9490 100 mm N Type (P-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-10 ohm·cm

100 mm N Type (P-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-10 ohm·cm Description

The substrate features monocrystalline silicon with a (100) crystallographic orientation and resistivity between 1 and 10 ohm·cm. Its 100 mm diameter meets industry standards for semiconductor processing. The controlled P-doping and consistent surface finish reduce defect density, aiding in uniform electrical performance. These characteristics support high-precision device fabrication in integrated circuits and sensor applications.

100 mm N Type (P-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-10 ohm·cm Applications

Electronics
- Used as a base substrate in integrated circuit fabrication to achieve uniform carrier mobility by leveraging controlled resistivity and precise doping.
- Applied as a platform in transistor manufacturing to secure stable electrical characteristics through defined dopant profiles.

Industrial
- Utilised as a substrate for power devices in switching applications to maintain consistent conduction properties by exploiting the wafer's restricted resistivity range and low defect density.

100 mm N Type (P-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-10 ohm·cm Packing

The wafers are individually secured in antistatic carriers and placed in foam-lined, cleanroom-grade boxes to prevent mechanical damage and contamination. Storage in a temperature-controlled environment with moisture-resistant packaging minimises particulate exposure. Custom packaging options, including additional cushioning and specialised labelling, are available to meet specific handling and storage requirements.

Frequently Asked Questions

Q1: How is the targeted resistivity range achieved in these wafers?
A1: The controlled P-doping process modulates charge carrier concentration to achieve resistivity between 1 and 10 ohm·cm. Process monitoring during thermal treatment and chemical processing ensures uniform electrical properties across the entire wafer.

Q2: What inspection methods are employed to maintain surface quality?
A2: Surface quality is verified using advanced metrology techniques such as optical microscopy and atomic force microscopy. These methods help detect surface defects and ensure the wafer meets the stringent flatness and roughness specifications required for high-precision semiconductor applications.

Q3: Can variations in wafer dimensions affect semiconductor processing?
A3: Yes, precise 100 mm wafer dimensions are critical. Dimensional accuracy is confirmed using calibrated measurement systems to ensure compatibility with standard equipment, reducing process variations and enhancing integration in subsequent fabrication steps.

Additional Information

Silicon wafers are foundational materials in semiconductor manufacturing. Their properties, such as crystallographic orientation and controlled dopant concentration, directly influence the performance of integrated circuits. Advances in doping techniques and surface treatment have significantly improved wafer uniformity and defect management.

Understanding the relationship between silicon’s electrical properties and device performance is crucial. Manufacturers use rigorous metrology and quality control protocols to ensure wafer consistency, enabling precise control over device characteristics and supporting the development of high-performance, miniaturised electronics.