CY9495 Ultra-Flat Silicon Wafer P-Type, Dia. 100 mm x 525 μm thick

Ultra-Flat Silicon Wafer P-Type, Dia. 4 inch x 525 μm thick Description

Ultra-Flat Silicon Wafer P-Type, Dia. 4 inch x 525 μm thick is produced from high-purity Si (Silicon) and is engineered to offer a uniform, atomically smooth surface. The 4-inch diameter conforms to standard semiconductor processing equipment, while the 525 μm thickness ensures mechanical stability and ease of handling during subsequent processing steps. Its p-type doping facilitates controlled conductivity for device applications. The substrate’s flatness is critical for uniform thin-film deposition, making it suitable for advanced integrated circuit manufacturing and device prototyping.

Ultra-Flat Silicon Wafer P-Type, Dia. 4 inch x 525 μm thick Applications

1.       Electronics
- Used as a substrate in integrated circuit fabrication to achieve uniform deposition layers by leveraging its ultra-flat surface for precise photolithographic patterning.
- Applied as the base material in MEMS devices to attain dimensional stability through controlled thickness, thereby enhancing device reliability.

2.       Industrial Processing
- Employed as a carrier wafer in semiconductor manufacturing to minimise surface irregularities by taking advantage of its controlled flatness and thickness.
- Utilised in advanced research setups as a calibration standard, offering a smooth interface that supports reproducible measurements and device prototyping.

Ultra-Flat Silicon Wafer P-Type, Dia. 4 inch x 525 μm thick Packing

The wafer is packaged in an anti-static, foam-lined container to prevent mechanical damage and contamination. It is sealed in a clean, low-humidity environment to preserve surface integrity throughout transit and storage. Protective cushioning and inert packaging materials reduce the risk of particulate contamination. Options for customised packaging, including vacuum-sealed pouches and labelled containers, are available to meet specific handling and environmental requirements.

Frequently Asked Questions

Q1: How is the surface flatness verified during production?
A1: Surface flatness is verified using interferometric measurements and atomic force microscopy. These techniques ensure that the wafer meets the precise flatness criteria required for high-resolution semiconductor processes while detecting any surface irregularities early in production.

Q2: What are the recommended storage conditions for the wafer?
A2: The wafer should be stored in a temperature-controlled environment (approximately 20-25°C) with low relative humidity. Anti-static packaging and controlled cleanroom conditions are recommended to prevent particulate and moisture contamination, ensuring the wafer's properties remain stable.

Q3: Can this wafer be integrated into standard semiconductor manufacturing processes?
A3: Yes, its 4-inch diameter and 525 μm thickness align with industry-standard equipment. The ultra-flat surface contributes to consistent thin-film deposition and improved pattern resolution, making it highly compatible with various semiconductor fabrication techniques.

Additional Information

Silicon wafers are foundational to semiconductor device fabrication, serving as the starting platform for integrated circuits and MEMS devices. The ultra-flat nature of these wafers minimises defects during film deposition, thus enhancing device uniformity. Advances in metrology and surface treatment techniques continue to elevate the performance standards in wafer production.

The technical evolution of silicon substrates has been driven by the demand for precision in microfabrication. Detailed surface characterisation, including interferometry and AFM assessments, plays a crucial role in ensuring that each wafer delivers the high degree of flatness necessary for next-level research and development activities in semiconductor manufacturing.