CY9507 Silicon Wafer Type P (100) Dia. 2 inch, SSP

Silicon Wafer Type P (100) Dia. 2 inch, SSP Description

Silicon (Si) wafer with P-type doping and a (100) crystallographic orientation serves as a fundamental substrate for semiconductor processes. The 2-inch diameter ensures compatibility with standard fabrication equipment. The wafer undergoes controlled dopant diffusion and low thermal stress treatments to reduce dislocation density. The SSP surface polish enhances uniformity during subsequent deposition and etching processes, facilitating reproducible outcomes in integrated circuit manufacturing.

Silicon Wafer Type P (100) Dia. 2 inch, SSP Applications

1.       Electronics and Semiconductor Applications
   - Used as a substrate in integrated circuit manufacturing to achieve uniform dopant distribution by leveraging controlled diffusion.
   - Applied in photovoltaic cell fabrication to improve energy conversion efficiency due to optimised surface properties.

2.       Industrial Applications
   - Utilised as a base in MEMS sensor arrays to generate precise electrical signals by leveraging low dislocation density.

Silicon Wafer Type P (100) Dia. 2 inch, SSP Packing

The silicon wafer is packaged in an anti-static container with foam padding to prevent mechanical and particulate damage. It is stored under a nitrogen atmosphere to reduce oxidation and moisture absorption. Each unit is sealed in a specialised plastic bag and placed in a rigid carton. Custom options for dimensions, labelling, and compartmentalisation are available to support specific handling and storage requirements.

Frequently Asked Questions

Q1: What testing methods are used to verify the wafer’s dopant uniformity?
A1: SAM utilises optical inspections, electron microscopy, and energy-dispersive X-ray spectroscopy to assess the dopant distribution across the wafer. These methods detect potential variations that could affect subsequent semiconductor processing.

Q2: How does the (100) crystallographic orientation impact fabrication processes?
A2: The (100) orientation assists in achieving predictable etching and deposition patterns, which are critical for pattern transfer in integrated circuit manufacturing. This orientation supports process control and consistency.

Q3: What storage conditions help maintain the wafer’s surface integrity?
A3: Wafers should be stored in a low-humidity, temperature-controlled environment with minimal oxygen exposure. Anti-static packaging and nitrogen purging are recommended to prevent surface contamination and deterioration.

Additional Information

Silicon substrates form the foundational material for semiconductor device fabrication and are critical in the evolution of modern electronics. Detailed analyses of dopant levels, dislocation density, and crystallographic orientation drive improvements in microfabrication techniques. These studies help optimise process parameters, enabling higher integration and performance in electronic devices.

Research in silicon processing continually refines etching, diffusion, and deposition methods. Advancements in analytical techniques, including electron microscopy and spectroscopy, provide essential feedback for process adjustments. This iterative process supports the reliable fabrication of integrated circuits and other semiconductor components, contributing to ongoing progress in electronic technology.