SC8591 Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 150 mm

Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 6 inch Description

The Silicon-on-Insulator Wafer (110), Dia. 6 inch, is engineered to provide exceptional material properties for advanced semiconductor applications. Its (110) crystal orientation enhances carrier mobility, making it suitable for high-performance logic and power devices. Designed with a SOI structure, the wafer ensures electrical isolation between the device layer and the supporting substrate, resulting in reduced leakage current, lower power consumption, and improved thermal management.

Adhering to stringent quality standards, this wafer offers high uniformity, minimal thickness variation, and exceptional surface smoothness. Its low defect density facilitates consistent results across multiple production cycles, supporting precision fabrication of MEMS, sensors, and other microelectronic components. Whether employed in research or mass production, the Silicon-on-Insulator Wafer (110), Dia. 6 inch meets the demands of modern semiconductor design, helping achieve optimal performance and long-term device reliability.

Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 6 inch Applications

Silicon-on-Insulator Wafer (110) Dia. 6 inch is recognised for its insulating properties and reduced parasitic capacitance. This substrate enables high-performance device manufacturing in industries that prioritise precision and efficiency. The (110) crystal orientation further enhances carrier mobility, ensuring faster device operation. By combining wafer-scale uniformity with structural integrity, this wafer is essential for electronics, healthcare solutions, and scientific research.

1. Electronics and Semiconductor Applications

·         High-speed transistors and integrated circuits benefiting from reduced parasitic capacitance

·         Precision sensors that demand stable, high-quality substrates

·         Advanced solar cells exploiting enhanced carrier mobility for improved efficiency

2. Medical Devices and Healthcare

·         Implantable biosensors requiring reliable and biocompatible wafer substrates

·         Diagnostic equipment modules reliant on ultra-thin, high-performance layers

3. Research and Scientific Instruments

·         Experimental microelectromechanical systems (MEMS) leveraging precise device fabrication

·         Analytical tools needing stable, low-noise platforms for accurate measurements

Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 6 inch Packaging

These Silicon-on-Insulator wafers (110) with a 6-inch diameter are shipped in specialised wafer carriers lined with static-dissipative materials. Each wafer is separated by protective inserts to prevent surface damage and contamination. They are sealed in nitrogen-purged packaging to ensure a moisture-free environment and stored in temperature- and humidity-controlled settings. Customisable labeling, packaging configurations, and handling instructions can be tailored to meet specific requirements, ensuring optimal protection and integrity throughout transport.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 6 inch FAQs

Q1: What are the key material properties of Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 6 inch?

A1: The (110) crystal orientation provides enhanced carrier mobility for certain device applications, making it suitable for high-performance CMOS and power components. The top silicon layer typically features low defect density and controlled thickness uniformity to ensure device consistency. The insulator layer, usually formed by a buried oxide (BOX), offers electrical isolation and reduced parasitic capacitance, promoting higher speed and lower leakage in advanced semiconductor designs.

Q2: How should this product be handled and stored?

A2: Always wear cleanroom gloves to avoid contaminating the wafer surface, and handle it by the edges to minimise contact with the active area. Store wafers in appropriate cassettes or carriers that offer cushioning to prevent mechanical stress. Maintain a clean, low-humidity environment with stable temperature control to preserve the BOX and top silicon layer quality, preventing defects and oxidation issues over time.

Q3: Which quality standards and certifications apply to Silicon-on-Insulator Wafer SOI Wafer (110) Dia. 6 inch?

A3: These wafers typically comply with SEMI standards governing diameter, thickness, flatness, and crystal orientation. They are also scrutinised under ISO 9001 for production consistency and ISO 14001 for environmental management. Manufacturers often employ rigorous in-line metrology processes for thickness uniformity and defect density, and may provide conformity certifications to ensure the wafers meet stringent semiconductor industry performance and reliability requirements.

Related Information

1. Manufacturing Process

Planning and proprietary bonding techniques are essential in producing a Silicon-on-Insulator Wafer (110) Dia. 6 inch. During fabrication, a thin silicon layer is carefully bonded to a handle wafer, encapsulating an insulating oxide layer in between. This structure ensures isolation properties, suitable for high-speed electronic circuits. Furthermore, manufacturers implement precision slicing and polishing methods to achieve a uniform surface finish and precise thickness requirements, optimising the wafer’s functional performance.

Quality checks at each developmental stage ensure that only properly aligned (110) wafers advance to the subsequent steps. During bonding, advanced particle inspection systems confirm cleanliness, while robotic handling significantly reduces contamination. The final post-bonding thermal processes are controlled to preserve the wafer’s mechanical integrity. This attention to detail lowers defect rates, leading to longer device lifespans and higher yield rates for manufacturers.

2. Applications in Advanced Industries

Aerospace sectors utilise this Silicon-on-Insulator Wafer (110) Dia. 6 inch for creating miniaturised sensors and radiation-hardened components. Its insulating oxide layer reduces parasitic capacitances, helping deliver high signal clarity and low-power operations. This results in efficient, compact systems that maintain functionality under harsh environmental conditions. Additionally, the mechanical stability of the (110) orientation aids in manufacturing devices intended for extreme vibration or temperature fluctuations.

Biomedical instrumentation also benefits from the properties of this SOI wafer. Enhanced electrical isolation allows for more accurate measurement of bio-signals, thereby improving diagnostic accuracy in medical sensors and implants. Ongoing research continues to expand its capabilities, offering the potential for advancements in patient monitoring and treatment.