SC8593 Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 100 mm

Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 4 inch Description

Our Silicon-on-Insulator (SOI) Wafer (111), 4-inch diameter, offers enhanced electrical isolation and thermal management, enabling device fabrication for high-performance requirements. The (111) orientation caters to applications requiring crystallographic properties, including advanced MEMS structures, power electronics, and sensor devices. An oxide layer serves as an insulator, reducing parasitic capacitance and improving device efficiency. Its uniform top silicon layer ensures consistent doping profiles, making it suitable for high-precision processing.

Manufactured under strict quality parameters, these wafers exhibit exceptional surface flatness, minimal defect densities, and tightly controlled thickness. Each wafer undergoes thorough inspection to maintain industry standards, ensuring reliable and repeatable results in demanding production environments. With this SOI wafer, researchers, developers, and manufacturers can innovate with confidence, leveraging a platform designed for high-quality semiconductor products of the future.

Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 4 inch Applications

The Silicon-on-Insulator (SOI) Wafer (111), measuring four inches in diameter, provides improved transistor performance, reduced parasitic capacitance, and excellent isolation properties, making it a critical substrate for advanced technology. Its structure of silicon layers separated by an insulating burial layer enables energy-efficient operation and enhanced durability. Additionally, its orientation ensures precise crystallographic alignment essential for electronic and optoelectronic applications.

1. Electronics and Semiconductor Applications

·         Development of high-speed integrated circuits with minimal power loss

·         Fabrication of low-noise sensors and imaging devices

·         Creation of advanced microelectromechanical systems (MEMS) for consumer electronics

2. Research and Development Applications

·         Exploration of new device architectures for advanced computing

·         Prototyping of novel photonic components with reduced cross-talk

·         Conducting material studies to optimise electronic and optical properties

3. Commercial and Industrial Applications

·         Production of energy-efficient solar cells for renewable energy systems

·         Integration into automotive sensor modules for enhanced safety

·         Manufacture of precision instrumentation for chemical and pharmaceutical processes

Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 4 inch Packaging

These 4-inch (111) Silicon-on-Insulator wafers are packaged in vacuum-sealed containers featuring anti-static foam layers that shield each wafer from shock and environmental contaminants. For optimal protection, store them in clean, humidity-controlled areas at 20–25°C. Double-bagging and sealed cassettes minimise dust accumulation, while optional nitrogen purging further reduces contamination. Customised packaging solutions, including specialised carriers and labelling, are available to meet specific handling and transport needs.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 4 inch FAQs

Q1: What are the key material properties of the Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 4 inch?

A1: This SOI wafer typically features a crystalline silicon device layer bonded to a (111)-oriented handle wafer, separated by a buried oxide (BOX) layer. The device layer has low defect density, minimising dislocations and enhancing device performance. Its thickness uniformity is tightly controlled, and the electrical resistivity can be customised through doping. Overall, these properties enable high reliability, thermal stability, and superior signal integrity for advanced semiconductor applications.

Q2: How should this Silicon-on-Insulator Wafer (111) Dia. 4 inch be handled and stored to maintain its integrity?

A2: Handle the wafer only in a cleanroom environment using approved gloves and tweezers to prevent contamination and mechanical damage. Avoid direct contact with the wafer’s active surface. Store the wafer in a wafer carrier or specialised shipping container, ensuring minimal vibration or temperature fluctuations. Proper ESD protection is critical, so grounding measures and anti-static workstations help safeguard the wafer’s sensitive device layer.

Q3: Which quality standards and certifications apply to Silicon-on-Insulator Wafer SOI Wafer (111) Dia. 4 inch?

A3: These wafers are typically produced in compliance with SEMI standards for dimensional accuracy, thickness tolerance, and surface quality. Manufacturers often maintain ISO 9001 certifications to ensure robust quality management systems. Additionally, wafers may undergo thorough inspections, including particle monitoring, total thickness variation (TTV) measurements, and defect density checks. Conformance to RoHS and other environmental regulations is often verified to meet global manufacturing requirements.

Related Information

1. Material Properties and Advantages

Sculpted from a single-crystal silicon substrate with a high-quality oxide layer, the Silicon-on-Insulator Wafer (111) Dia. 4 inch exhibits exceptional electrical insulation capabilities that minimise parasitic capacitance. This strategic design ensures device performance for high-demand integrated circuits and power management applications. The (111) crystalline orientation further enhances doping uniformity, ensuring consistent resistivity profiles that are essential for advanced electronics.

Thin device layers within the SOI wafer structure enable lower leakage currents and efficient heat dissipation, resulting in improved energy efficiency for a wide range of products. By isolating the active silicon layer on top of an oxide matrix, this wafer provides resistance to latch-up and reduces cross-talk, making it a prime choice for MEMS devices and other precision systems.

2. Applications in Advanced Industries

Used extensively in aerospace electronics, the Silicon-on-Insulator Wafer (111) Dia. 4 inch offers thermal stability and strong electrical isolation to withstand extreme conditions. High-altitude and space-bound systems benefit from its radiation tolerance, maintaining reliable functionality under cosmic exposure that could hinder standard silicon wafers.

Widely embraced by the automotive sector, this wafer addresses demands for fuel efficiency and performance in electric drivetrains. Enhanced power modules and sensor-based vehicle safety systems rely on the SOI structure’s EMI resilience, enabling high-speed data processing and accurate readings in challenging environments.