SC9901 Recrystallized Silicon Carbide Plate

Recrystallized Silicon Carbide Plate Description

Recrystallized Silicon Carbide Plate is fabricated from high-purity (≥99%) SiC and maintains a consistent density of approximately 2.7 g/cm³. Its plate form is suitable for integration with standard industrial systems and high-temperature processing equipment. The controlled recrystallization process minimises microstructural defects and enhances thermal performance, which is critical in applications requiring efficient heat dissipation and structural stability under extreme conditions.

Recrystallized Silicon Carbide Plate Applications

Electronics
- Used as a substrate in high-temperature sensor modules to achieve reduced thermal stress by leveraging SiC’s thermal stability.
- Applied as a protective barrier in semiconductor processing equipment to maintain component integrity under elevated temperatures by utilising its recrystallized microstructure.

Industrial Equipment
- Serves as a thermal spreader in furnace liners to achieve uniform heat distribution by capitalising on its high operating temperature capacity.
- Used as a support element in high-temperature reactors to mitigate heat-induced deformation by leveraging its structural uniformity and density.

Recrystallized Silicon Carbide Plate Packing

Recrystallized Silicon Carbide Plate units are packaged in anti-static, moisture-resistant pouches and secured within custom-fitted, cushioned containers. Storage in a temperature-controlled facility is recommended to prevent thermal cycling and contamination. Sealed packaging minimises dust ingress while offering options for labelling and compartmentalisation to accommodate specific handling requirements and maintain product integrity during transit.

Frequently Asked Questions

Q1: How does the recrystallisation process affect the plate's thermal performance?
A1: The recrystallisation process refines the SiC microstructure and minimises grain boundary defects, which enhances thermal conductivity and stability. This results in improved performance during prolonged high-temperature operation.

Q2: What quality control measures are used during manufacturing?
A2: The production undergoes assessment via scanning electron microscopy and X-ray diffraction to verify microstructural uniformity and dimensional precision. These controls help maintain consistency in high-temperature performance parameters.

Q3: Can the plate dimensions be tailored to specific equipment requirements?
A3: Yes, the product allows for customised dimensions. Engineers can specify size requirements to ensure optimal integration with existing high-temperature systems, thereby enhancing overall component compatibility.

Additional Information

Silicon Carbide (SiC) is valued in materials science for its high thermal conductivity, hardness, and stability at elevated temperatures. Its crystalline structure, achieved through controlled recrystallisation, provides enhanced performance in demanding environments. Understanding these intrinsic material properties is essential for developing components that meet the rigorous demands of modern industrial systems.

Advancements in ceramic processing techniques have improved control over SiC’s microstructure, reducing defect density and ensuring repeatable performance under thermal stress. These improvements contribute to broader applications in high-temperature electronics, industrial processing, and precision thermal management systems.