SC9942 Reaction Bonded Silicon Carbide Beam 20 x 20 mm

Reaction Bonded Silicon Carbide Beam 20 x 20 mm Description

The Reaction Bonded Silicon Carbide Beam 20 x 20 mm is manufactured using a reaction bonding process that converts Si powders into a continuous, thermally stable matrix. The beam's dimensions of 20 x 20 mm ensure compatibility with standardised fixtures in high-temperature processing equipment. Its composition of ≥92% SiC and density of ~3.0 g/cm³ provide mechanical strength and thermal stability. The process control, including phase analysis and surface characterisation, enhances its performance in thermal and mechanical load applications.

Reaction Bonded Silicon Carbide Beam 20 x 20 mm Applications

Industrial Processing Equipment
- Used as a structural component in high-temperature furnace supports to maintain stability under extreme conditions by capitalising on its thermal endurance.
- Applied as a wear-resistant insert in abrasive handling systems to mitigate material erosion due to its inherent hardness.

Electronics Assembly
- Serves as a heat sink in power electronics to achieve efficient thermal management by utilising its high thermal conductivity up to 1300 ℃.
- Frequently used as a substrate in high-stress electronic components to ensure dimensional stability during operation.

Reaction Bonded Silicon Carbide Beam 20 x 20 mm Packing

The product is packaged with protective cushioning materials and placed in a rigid, anti-static container to minimise mechanical stress and prevent contamination. It is stored in a dry, temperature-controlled environment to preserve its structural and chemical integrity. Custom packaging options, such as individual vacuum sealing and tailored labelling, are available upon request to meet specific storage and handling requirements.

Frequently Asked Questions

Q1: What process controls are applied during manufacturing?
A1: The material undergoes rigorous phase verification using X-ray diffraction and microstructural analysis via SEM to ensure a consistent reaction bonding process, which limits defect density and maintains thermal stability.

Q2: How does the material perform in high-temperature operations?
A2: With an operating threshold of ≤1300 ℃, the Reaction Bonded Silicon Carbide Beam maintains structural integrity and dimensional stability, making it suitable for prolonged use in high-temperature environments subject to thermal cycling.

Q3: Can the dimensions or form factor of the beam be modified?
A3: Customisation of dimensions and form is available on request. Adjustments are performed under strict process controls to retain the mechanical and thermal properties critical to application performance.

Additional Information

Silicon Carbide (SiC) is widely recognised in materials science for its exceptional hardness and thermal conductivity. Reaction bonding transforms SiC powders into a consolidated structure without the need for high-pressure sintering, resulting in components that are both cost-effective and durable. This process is critical for applications requiring materials that can withstand high wear and thermal shock.

Advancements in ceramics processing have expanded the application scope of SiC in fields such as aerospace, electronics, and industrial manufacturing. Understanding the interplay between material processing, microstructural integrity, and functional performance is essential in optimising ceramic components for specific high-demand scenarios.