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SD6706 Silicon Carbide (SiC) Schottky Diodes

Catalogue Number SD6706
Material SiC
Operating Temperature -55℃ to 125℃
Dimensions Depends on model

Stanford Advanced Materials offers high-performance silicon carbide (SiC) Schottky diodes designed for exceptional efficiency, high voltage tolerance, and ultra-fast switching. Our SiC Schottky diodes are suitable for power electronics and renewable energy systems, providing extraordinary thermal stability and reliability in demanding environments.

Related products: low forward voltage Schottky diodes, miniature/SMD Schottky diodes, power Schottky rectifiers

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