Discontinued (Discontinued) ST0149 Hafnium Oxide (HfO2) Sputtering Target

Hafnium Oxide (HfO2) Sputtering Target Description

The Hafnium Oxide (HfO2) Sputtering Target is a high-quality material designed for precision sputtering coating processes. Manufactured using superior raw materials and advanced manufacturing techniques, this target provides excellent performance in critical microfabrication and ensures consistent deposition rates and layer uniformity. Its outstanding thermal stability and dielectric properties make it essential for the production of microelectronic devices and insulating layers.

Hafnium Oxide (HfO2) Sputtering Target Applications

- Microelectronics: Essential for the deposition of high-k dielectric layers in semiconductor devices.
- Surface Coatings: Used in modern surface engineering for wear resistance and protective layers.
- Optoelectronics: Suitable for the manufacture of insulating components in LED and display technology.
- Research and Development: Ideal for experiments and the development of prototypes in materials science laboratories.

Hafnium Oxide (HfO2) Sputtering Target Packaging

Our Hafnium Oxide sputtering targets are packaged with utmost care to ensure product integrity during handling and transport.
- Generally, they are vacuum-sealed with options for custom weight and bulk packaging solutions according to customer specifications.

Frequently Asked Questions

Q1. What is Hafnium Oxide (HfO₂)?

Hafnium Oxide (HfO₂) is a ceramic high-performance material with excellent dielectric properties. Due to its high dielectric constant, high thermal stability, and resistance to high-voltage breakdowns, it is commonly used in thin film applications. It is frequently employed in the semiconductor and electronics industry, particularly in applications involving high-k gate dielectrics.

Q2. What applications exist for Hafnium Oxide (HfO₂) sputter targets?

Hafnium Oxide sputter targets are primarily used for the deposition of HfO₂ thin films in various applications, such as:

High-k dielectric materials in semiconductor devices (as gate dielectrics in MOSFETs).

Optical coatings, such as mirrors and anti-reflective coatings.

Capacitors and insulators in integrated circuits.

Memory devices, including DRAM and non-volatile memory applications.

Microelectronics for the manufacture of advanced transistor technologies.

Q3. What are the main advantages of Hafnium Oxide (HfO₂) layers?

High dielectric constant (k-value): HfO₂ has a high dielectric constant, making it suitable for miniaturised electronic devices.

Thermal stability: HfO₂ remains stable at high temperatures, making it ideal for applications in harsh environments or high-temperature processes.

Dielectric gate properties: HfO₂ offers low leakage currents, essential for transistors in advanced CMOS technology (complementary metal-oxide-semiconductor technology).

Durability in memory devices: HfO₂ is employed in resistive switching memory (RRAM) and other non-volatile memory technologies.