SI6021 Quartz Crucible for Single Crystal Silicon pulling

Name: SI6021 Quartz Crucible for Single Crystal Silicon pulling
SKU: SI6021
Availability: InStock
Rating: 4.9 (166 reviews)

Catalogue Number	SI6021
Material	Quartz, SiO2
Operating Temperature	1100-1200℃
Purity	99.99%

The quartz crucible for pulling single crystal silicon is a specialised device made from molten quartz or quartz glass and has the shape of a bell. Stanford Advanced Materials (SAM) provides optical products of exceptional quality at highly competitive prices.

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Material	Quartz, SiO2
Working Temperature	1100-1200℃
Purity	99.99%
Melting Point	1660-1710℃
Softening Point	1570℃
Density	2.2g/cm3

Specification	D	H	W1	W2	W3	R1	R2
14 inch	355±3	240±3	10±3	10±3	11±3	89	381
16 inch	405±2	280±3	9±2	9±2	9±2	90	450
18 inch	457±3	355±2	7-12	7-12	7-12	88-120	457-500
20 inch	505±3	385±2	11±2	11±2	11±2	120	508
22 inch	555-560	406±2	11+3/-1	11+3/-1	11+3/-1	127	560
24 inch	609+2/-3	440±3	11-2/+3	12-2/+3	12-2/+3	120	610
25 inch	632±3	460±3	11+3/-1	11+3/-1	14+4/-2	120	635
26 inch	654±3	500±3	12+3/-1	12+3/-1	14+4/-2	120	660
28 inch	708±3	556±3	13.5±2	13.5±2	19.0±3	120	710
30 inch	758±3	580±3	13.5±2	13.5±2	19.0±3	120	760
32 inch	810±3	680±3	15.0±3	15.0±3	21.0±4	120	81
S32 inch	834±4	680±3	15.0±3	15.0±3	21.0±4	120	834
S36 inch	943±4	760±3	15.0±3	15.0±3	22.0±4	160	947
40 inch	1016±4	760±3	15.0±3	15.0±3	25.0±5	160	1016

Crucible Type	Material	Max Temp (°C)	Thermal Conductivity	Thermal Shock Resistance	Chemical Resistance	Applications
Quartz Ceramic	Quartz Ceramic	1100	Low	High	High	General laboratory
BeO Ceramic	Beryllium Oxide	1800	Very High	High	High	High-temperature, electronics
PG Coated C	PG coated Graphite	2000	High (anisotropic)	Very High	High	Crystal growth, evaporation
PG Coated PBN	PG coated PBN	1800	High	Very High	Very High	High-purity crystal growth
PBN Crucible	Pyrolytic BN	1800	High	Very High	Very High	MBE, OLED, VGF, LEC processes
AlN Crucible	Aluminium Nitride	1800	High	High	High	Semiconductor, packaging
SiC Crucible	Silicon Carbide	1600	High	Very High	High	Metal melting, foundry
H-BN Crucible	Hot Pressed BN	1800	Moderate	Very High	High	Metal processing, soldering
Al Titanate	Aluminium Titanate	1400	Low	Excellent	Moderate	Thermal cycling, glass industry
Alumina Crucible	Aluminium Oxide	1700	Moderate	Moderate	High	General high-temperature
Quartz for Si	Fused Quartz	1200	Low	High	High	Silicon single crystal growth (Czochralski)

Material	Quartz, SiO2
Working Temperature	1100-1200℃
Purity	99.99%
Melting Point	1660-1710℃
Softening Point	1570℃
Density	2.2g/cm3

Specification	D	H	W1	W2	W3	R1	R2
14 inch	355±3	240±3	10±3	10±3	11±3	89	381
16 inch	405±2	280±3	9±2	9±2	9±2	90	450
18 inch	457±3	355±2	7-12	7-12	7-12	88-120	457-500
20 inch	505±3	385±2	11±2	11±2	11±2	120	508
22 inch	555-560	406±2	11+3/-1	11+3/-1	11+3/-1	127	560
24 inch	609+2/-3	440±3	11-2/+3	12-2/+3	12-2/+3	120	610
25 inch	632±3	460±3	11+3/-1	11+3/-1	14+4/-2	120	635
26 inch	654±3	500±3	12+3/-1	12+3/-1	14+4/-2	120	660
28 inch	708±3	556±3	13.5±2	13.5±2	19.0±3	120	710
30 inch	758±3	580±3	13.5±2	13.5±2	19.0±3	120	760
32 inch	810±3	680±3	15.0±3	15.0±3	21.0±4	120	81
S32 inch	834±4	680±3	15.0±3	15.0±3	21.0±4	120	834
S36 inch	943±4	760±3	15.0±3	15.0±3	22.0±4	160	947
40 inch	1016±4	760±3	15.0±3	15.0±3	25.0±5	160	1016

SI6021 Quartz Crucible for Single Crystal Silicon pulling

Quartz Crucible for Single Crystal Silicon Pulling Description

Quartz Crucible for Single Crystal Silicon Pulling Specifications

Quartz Crucible for Single Crystal Silicon Pulling Application

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