AL10240 Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.5 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.5 mm comprises a single-crystal Al2O3 substrate with a precise (0001) orientation. Its dimensions support integration with standard semiconductor fabrication equipment. The chemical inertness and thermal stability of sapphire provide a barrier against oxidation. The wafer’s consistent thickness and well-polished surface permit controlled device processing and accurate performance evaluation in advanced applications.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.5 mm Applications

Electronics and Semiconductor Applications
- Used as a substrate in LED fabrication to achieve uniform heat dissipation due to sapphire’s high thermal conductivity.
- Applied as a base material in power semiconductor devices to ensure stable electrical performance owing to its chemical inertness.

Optoelectronics
- Used as a component in laser diode assemblies to minimise optical scattering due to its smooth, defect-free surface.
- Employed in optical sensor systems to achieve accurate signal transmission owing to the material’s stable crystallographic structure.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.5 mm Packing

The wafer is packaged in an anti-static, rigid container with cushioned inserts to prevent mechanical damage and reduce particulate contamination. It is stored under controlled temperature and humidity conditions to maintain surface integrity. Customised packaging options, including moisture barrier pouches and individual sealing, are available to meet specific handling requirements during transit and storage.

Frequently Asked Questions

Q1: What advantages does the C-plane (0001) orientation offer?
A1: The (0001) orientation provides a uniform atomic arrangement that facilitates controlled device fabrication processes. This uniformity ensures a consistent surface for subsequent thin film deposition and patterning, reducing variability during high-temperature operations.

Q2: How should the wafer be handled to maintain its surface integrity?
A2: Handle the wafer using non-abrasive tools and wear anti-static gloves to prevent surface contamination and micro-scratches. It should be cleaned in a controlled environment using appropriate solvents to avoid residue buildup on the highly polished surface.

Q3: Are there specific storage conditions recommended for this wafer?
A3: The wafer should be stored in a clean, temperature-controlled environment with minimal humidity. Using an anti-static, sealed container helps prevent particulate contamination and mechanical stress, preserving the wafer’s structural and surface properties.

Additional Information

Sapphire is a crystalline form of aluminium oxide (Al2O3) noted for its low defect density and high thermal stability. These properties make it a common choice in substrates used for high-temperature device processing and optoelectronic applications. Its chemical inertness also provides a stable platform for subsequent deposition layers in semiconductor fabrication.

The controlled synthesis and quality monitoring of sapphire wafers have evolved significantly, with advancements in chemical vapour deposition and surface metrology. These improvements enable precise control over crystallographic orientation and surface finish, which are critical for applications in electronics and optical devices, ensuring the material meets stringent integration requirements.