AL10241 Sapphire Wafer Al2O3 C-plane (0001) 5x5x0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) 5x5x0.5 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 5x5x0.5 mm is produced from single-crystal aluminium oxide (Al2O3) and exhibits a (0001) orientation. The 5 mm x 5 mm dimensions and 0.5 mm thickness support integration into semiconductor and optical assembly processes. Its defined crystallographic orientation ensures a smooth surface and reduced dislocation density. The product is characterised by controlled growth conditions, as verified through X-ray diffraction and surface profilometry.

Sapphire Wafer Al2O3 C-plane (0001) 5x5x0.5 mm Applications

1.       Electronics
   - Used as a substrate in integrated circuits to achieve uniform dielectric properties by leveraging its precise crystallographic orientation and flat surface.
   - Applied as an insulating layer in microelectronic devices to minimise electrical interference through its stable Al2O3 structure.

2.       Optics
   - Serves as an optical window in laser systems to maintain clarity and consistency by using its low defect density.
   - Used in photonic devices as the base material to reduce scattering losses and improve overall device performance.

Sapphire Wafer Al2O3 C-plane (0001) 5x5x0.5 mm Packing

Each Sapphire Wafer is individually sealed in an anti-static pouch and placed in a cushioned container to prevent mechanical damage and contamination. The packaging employs foam inserts to limit particle ingress. Store in a temperature- and humidity-controlled environment to maintain material integrity. Customised packaging options, including additional labelling and compartmentalisation, are available to meet specific handling and storage requirements.

Frequently Asked Questions

Q1: How does the C-plane orientation influence wafer processing?
A1: The C-plane (0001) orientation provides a uniform and atomically smooth surface, which aids in accurate lithography and deposition processes by reducing dislocation density. This orientation ensures consistency in subsequent device fabrication steps.

Q2: What quality control measures are used during wafer production?
A2: Quality control includes X-ray diffraction (XRD) to verify crystallographic orientation and surface profilometry to assess flatness and defect levels. These tests confirm that the wafer meets the stringent specifications required for semiconductor applications.

Q3: Is it possible to customise wafer dimensions or thickness?
A3: Customisation options may be available based on production capabilities. Specific dimensions or thickness adjustments require a discussion of process feasibility and associated quality control modifications.

Additional Information

Sapphire, as a form of single-crystal Al2O3, plays a critical role in materials science due to its chemical inertness, high thermal stability, and excellent electrical insulation properties. Its hard and stable structure makes it an attractive substrate in high-precision applications across semiconductor and optical industries.

Understanding the implications of crystallographic orientation in sapphire wafers is essential for optimising device performance. Detailed characterisation methods, such as XRD and surface profilometry, ensure that these substrates meet the rigorous standards required for advanced manufacturing processes.