AL10247 Sapphire Wafer Al2O3 C-plane (0001) 10x10x1 mm

Sapphire Wafer Al2O3 C-plane (0001) 10x10x1 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 10x10x1 mm is a high-purity alumina substrate featuring a controlled (0001) orientation. With dimensions of 10x10 mm and a thickness of 1 mm, it integrates well with standard semiconductor equipment. Its chemical inertness and thermal stability allow it to serve effectively in device fabrication processes while the low dislocation density minimises micro-defects in critical applications.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x1 mm Applications

Electronics
- Used as a substrate in integrated circuit fabrication to achieve uniform film deposition by leveraging the wafer’s controlled crystallographic orientation, thereby reducing defect density in active layers.

Optical Devices
- Applied as an optical platform in sensor and laser assemblies to maintain stable light transmission by utilising its inherent thermal resistance and chemical inertness.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x1 mm Packing

Each Sapphire Wafer is individually secured in an anti-static container with low-outgassing foam cushioning to prevent mechanical damage. The wafer is stored in a clean, humidity-controlled environment to minimise surface contamination and maintain flatness. Packaging options include specialised compartmentalisation and humidity indicators, ensuring appropriate conditions during storage and transport.

Frequently Asked Questions

Q1: How is the substrate’s crystallographic orientation verified?
A1: X-ray diffraction (XRD) analysis is employed to confirm the (0001) C-plane alignment during production. This measurement, along with regular optical profiling, ensures consistency in crystal orientation and minimises processing variances.

Q2: What storage conditions are recommended for this wafer?
A2: The wafer should be stored in a dust-free, humidity-controlled environment at temperatures between 20°C and 25°C. These conditions help maintain surface integrity and prevent contamination or thermal-induced defects.

Q3: Can the wafer dimensions be customised for specific applications?
A3: Customisation options can be explored based on technical feasibility while preserving the substrate’s controlled crystallographic properties. Consultation with the technical team is recommended to assess production modifications for specialised applications.

Additional Information

Alumina (Al2O3) is a ceramic material valued for its hardness, electrical insulation, and thermal stability. As a synthetic form of sapphire, this wafer benefits from controlled crystal growth methods that yield a uniform, low-defect structure. These properties are critical in applications requiring durable substrates with minimal interfacial irregularities.

A clear understanding of structural properties is essential in semiconductor and optical engineering. The controlled C-plane orientation aids in the alignment of subsequent thin films, reducing interface-related issues and supporting enhanced device performance in high-precision environments.