AL10248 Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm is fabricated from high-purity aluminium oxide (Al2O3) and measures 10 mm by 5 mm with a thickness of 0.5 mm. The wafer’s C-plane (0001) orientation is confirmed using X-ray diffraction, ensuring the required crystallographic alignment for semiconductor and optical substrate applications. Controlled processing minimises surface imperfections and maintains dimensional consistency for integration into research and production environments.

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm Applications

1.      
Electronics
   - Used as a substrate in semiconductor fabrication modules to achieve stable insulating performance by leveraging its uniform crystallographic orientation.
   - Applied as a support structure in microelectronic devices to mitigate thermal variations by leveraging its high thermal stability.

2.      
Photonics
   - Used as a base substrate in laser systems to realise controlled light propagation by leveraging its high optical transparency.
   - Applied as an optical window in spectroscopic devices to reduce interference effects by leveraging its chemical inertness.

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm Packing

The wafer is individually packaged in static-free, anti-scratch carriers housed within cushioned, sealable containers to prevent mechanical impact and surface contamination. The packaging is designed to resist moisture ingress and particulate exposure during transit. Storage recommendations include a controlled low-humidity environment. Custom packaging options, including traceable batch labelling and compartmentalisation, are available to accommodate specific laboratory and production requirements.

Frequently Asked Questions

Q1: How is the crystallographic orientation verified?
A1: The wafer’s C-plane (0001) orientation is confirmed using X-ray diffraction analysis, which quantitatively measures crystal alignment and surface uniformity. This verification process provides the necessary data for integration into semiconductor fabrication environments.

Q2: What are the recommended storage conditions for the wafer?
A2: It is advisable to store the wafer in a clean, low-humidity environment using anti-static containers to avoid surface contamination. Such controlled conditions help maintain the wafer’s dimensional integrity and crystallographic properties over time.

Q3: How does the wafer's material composition benefit semiconductor processing?
A3: The high-purity aluminium oxide (Al2O3) composition offers resistance to thermal and chemical stresses. This stability in material properties is critical during high-temperature processing, reducing the risk of substrate deformation and ensuring device fabrication consistency.

Additional Information

Aluminium oxide (Al2O3), when processed into sapphire wafers, exhibits exceptional chemical stability, high thermal conductivity, and significant hardness. These properties make sapphire substrates an essential component in both electronics and photonics research. Material evaluation methods such as X-ray diffraction and surface profilometry provide critical insights into crystal structure and surface quality.

Advances in crystal growth and processing techniques have improved wafer uniformity and reduced defect densities. This progress supports broader research in materials science, facilitating enhanced performance and integration of sapphire substrates into complex semiconductor and optical systems.