AL10252 Sapphire Wafer Al2O3 R plane 10x10x0.5 mm

Sapphire Wafer Al2O3 R plane 10x10x0.5 mm Description

Sapphire Wafer Al2O3 R plane 10x10x0.5 mm is fabricated from high-purity aluminium oxide (Al2O3) and features an R-plane orientation that facilitates uniform heat dissipation and minimises crystallographic defects. The dimensions (10 mm x 10 mm x 0.5 mm) are precisely maintained to support integration into semiconductor processing equipment. Its surface finish and chemical inertness make it suitable as a stable substrate for high-temperature and optical applications.

Sapphire Wafer Al2O3 R plane 10x10x0.5 mm Applications

Electronics Applications
- Used as a substrate in LED and semiconductor devices to achieve enhanced thermal management by leveraging its excellent heat conductivity and low defect density.
- Applied as a base layer for RF components to secure dimensional reliability and minimise signal loss through its smooth surface topology.

Industrial Applications
- Serves as an insulating substrate in high-frequency circuits to ensure component stability by utilising its chemical inertness and consistent crystallographic orientation.
- Frequently used in sensor modules to optimise signal integrity due to its minimal thermal expansion and structural uniformity.

Sapphire Wafer Al2O3 R plane 10x10x0.5 mm Packing

The wafers are packaged individually in anti-static carriers and sealed within rigid foam-lined containers to prevent physical damage and particulate contamination. Storage recommendations include a cool, dry environment with controlled humidity to preserve material integrity. Additional customisation options, such as vacuum-sealed packaging and specific labelling, are available to meet specialty handling requirements.

Frequently Asked Questions

Q1: How does the R plane orientation affect the wafer’s performance?
A1: The R plane orientation provides a uniform crystalline structure that enhances heat dissipation and minimises defects during high-temperature processing. This controlled orientation ensures that the wafer maintains its structural and thermal properties under varied operating conditions.

Q2: What quality control measures are implemented during fabrication?
A2: SAM utilises advanced CVD techniques combined with SEM surface inspections to verify the consistency of the crystal orientation and detect micro-scale imperfections. This rigorous testing process supports dimensional accuracy and high uniformity, critical for semiconductor applications.

Q3: Can this sapphire wafer be integrated with standard semiconductor processes?
A3: Yes, the 10x10x0.5 mm dimensions have been defined to align with standard semiconductor processing equipment. Its chemical inertness and precise crystallographic orientation facilitate integration into existing fabrication workflows without requiring process modifications.

Additional Information

Sapphire wafers, made from single-crystal Al2O3, serve as substrates in various technical fields due to their excellent thermal stability and insulation properties. Their role in optical and electronic devices is often tied to their ability to endure extreme processing environments without significant degradation. The interplay between crystal orientation and defect minimisation is critical for achieving performance consistency.

Understanding wafer specifications, including dimensions and surface finish parameters, is essential for researchers and process engineers. Detailed material characterisation enables the optimisation of device fabrication processes, contributing to improved operational performance across multiple industrial applications.