AL10255 Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.1 mm

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.1 mm Description

The Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.1 mm is manufactured from high-purity aluminium oxide (Al2O3) and cut precisely along the A plane (11-20). The 10x10 mm size provides compatibility with standard processing equipment, while a thickness of 0.1 mm supports minimal thermal mass for high-speed processes. Its inherent chemical inertness and structural homogeneity serve to minimise contamination risks in semiconductor and optical device fabrication.

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.1 mm Applications

Electronics and Semiconductor Processing
- Used as a substrate in thin-film deposition for integrated circuits to achieve uniform film growth by leveraging its consistent crystal orientation.
- Applied as a carrier for epitaxial layer growth in high-speed electronic devices, benefiting from its dimensional accuracy and chemical inertness.

Optoelectronics and Sensor Systems
- Serves as a base material in LED fabrication to promote optimal light emission by using its superior surface finish and low defect density.
- Employed in optical sensor modules to maintain high signal clarity and reduce noise due to its excellent structural uniformity.

Industrial Process Equipment
- Frequently used as a component in precision thermal processing systems to facilitate rapid heat transfer by taking advantage of its low thermal mass and high heat resistance.

Sapphire Wafer Al2O3 A plane (11-20) 10x10x0.1 mm Packing

The wafers are packaged in anti-static, clean-room grade containers with foam padding to prevent mechanical damage. Each wafer is individually sealed in moisture-barrier pouches to minimise particulate contamination. It is recommended that the products be stored in a low-humidity, temperature-controlled environment. Custom packaging options are available to meet specific logistics and handling requirements while preserving substrate integrity.

Frequently Asked Questions

Q1: What processing techniques are used to ensure substrate flatness?
A1: SAM employs interferometric surface mapping during processing, which accurately detects deviations and quantifies flatness. This measurement guides the final polishing step, ensuring the wafer meets stringent flatness criteria necessary for semiconductor applications.

Q2: How does the A plane (11-20) orientation affect device performance?
A2: The A plane (11-20) orientation offers consistent surface alignment and reduced defect density, resulting in improved layer uniformity during epitaxial growth. This consistency aids in achieving predictable electrical characteristics and device performance.

Q3: What storage conditions are recommended to maintain wafer quality?
A3: It is advised to store the wafers in a temperature-controlled and low-humidity environment. The substrates should remain in their anti-static packaging until use to prevent contamination and physical damage during handling.

Additional Information

Sapphire substrates, composed of crystalline Al2O3, play a crucial role in high-temperature and high-frequency applications. Their chemical inertness and mechanical hardness make them suitable for environments where minimal interaction and high durability are required. The selection of an A plane cut further provides a uniform surface that benefits subsequent processes like epitaxy and thin-film deposition.

In the broader context of materials science, sapphire wafers are critical in advancing semiconductor and optoelectronic industries. Their precise crystallographic orientation and superior surface properties foster enhanced performance in devices, especially where nanoscale precision and stability are pivotal.