AL10256 Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.25 mm

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.25 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 10x10 mm with a 0.25 mm thickness consists of a single crystal substrate made from aluminium oxide (Al2O3). The dimensions ensure compatibility with standard semiconductor processing equipment. Its (0001) C-plane orientation provides a uniform crystalline surface essential for epitaxial growth and high-performance optical devices. The inherent chemical inertness and high thermal stability support applications requiring specific material properties.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.25 mm Applications

Electronics
- Used as a substrate in integrated circuits to mitigate interface defects by leveraging its uniform crystal structure.

Optical Systems
- Applied as an optical window in sensor assemblies to address light scattering issues by utilising its consistent surface flatness.

Industrial
- Used as a component in high-temperature processing equipment to maintain insulation properties by utilising its thermal stability.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.25 mm Packing

The wafer is packaged in anti-static, low-surface-energy pouches and enclosed in cushioned, inert material containers to reduce mechanical impact and contamination. Storage in clean environments with controlled temperature and humidity is recommended to preserve material integrity. Custom rigid packaging options, including compartmentalisation and labelling, are available to meet specific transportation and storage requirements.

Frequently Asked Questions

Q1: How is the surface flatness controlled during fabrication?
A1: The wafer undergoes atomic force microscopy and laser interferometry inspections to ensure surface flatness within micrometre tolerances. These methods effectively measure roughness and detect minor defects that could impact subsequent processing.

Q2: What role does the C-plane (0001) orientation play in substrate performance?
A2: The (0001) orientation provides a uniform cleavage plane, which enhances epitaxial deposition accuracy. Considered alignment improves interface quality for semiconductor and optical applications.

Q3: How is defect density minimised during production?
A3: SAM employs controlled thermal processing and rigorous in-line inspections using metrology tools to detect and reduce defects. This approach ensures the wafer achieves the necessary consistency for high-end electronic device fabrication.

Additional Information

Aluminium oxide in its single crystal form, commonly known as sapphire, exhibits high hardness, excellent thermal conductivity, and chemical inertness. These properties make it a frequent choice for substrates in electronic and optical applications where durable material performance is essential. Understanding the crystallographic orientation further aids in material selection for specific manufacturing processes.

The production of sapphire wafers involves controlled crystal growth and extensive post-processing evaluations. Researchers and engineers rely on detailed material characterisations to integrate these substrates into advanced devices, ensuring that both processing equipment compatibility and application-specific demands are met through precise material engineering.