AL10258 Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm is a high-purity, single-crystal aluminium oxide substrate exhibiting a (0001) orientation. The dimensions of 10 mm by 5 mm and a thickness of 0.5 mm ensure compatibility with standard semiconductor processing equipment while maintaining mechanical stability. Its precise crystallographic alignment is critical for applications requiring consistent electrical insulation and optical clarity in research and production processes.

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm Applications

Electronics
- Use as a substrate in semiconductor sensor fabrication to achieve high signal stability by leveraging its consistent crystallographic orientation.
- Applied as a dielectric layer in RF filter assemblies to reduce signal interference by leveraging its effective electrical insulation properties.

Industrial
- Used as a calibration standard in optical measurement systems to ensure accurate dimensional analysis by leveraging its uniform thickness and optical clarity.

Sapphire Wafer Al2O3 C-plane (0001) 10x5x0.5 mm Packing

Each wafer is individually secured in an anti-static, cushioned container designed to prevent mechanical damage and contamination. It is enclosed in a sealed plastic pouch with an integrated desiccant to maintain a moisture-free environment. Storage in a temperature-controlled area is recommended to prevent thermal stress. Custom packaging options, including labelled compartments and specialised cushioning, are available upon request.

Frequently Asked Questions

Q1: What is the significance of the (0001) orientation in this wafer?
A1: The (0001) orientation defines a uniform crystal plane that is essential for consistent optical and electrical properties. This alignment minimises variability in substrate behaviour, which is important for precise research and industrial fabrication processes.

Q2: How do the specified dimensions impact process integration?
A2: The 10x5 mm size and 0.5 mm thickness align with standard semiconductor processing equipment, facilitating efficient handling and consistent results in layer deposition, etching, and other fabrication steps.

Q3: What quality control measures are applied during production?
A3: Stanford Advanced Materials employs systematic surface analysis techniques such as SEM and AFM scanning to detect defects and verify dimensional accuracy. These controls help ensure that the wafers consistently meet the stringent requirements of crystal substrate applications.

Additional Information

Sapphire wafers, composed of single crystal Al2O3, are fundamental in the development of substrates for various electronic and optoelectronic devices. Their inherent properties, including high electrical insulation and optical transparency, make them a preferred choice in environments where precise material behaviour is essential. The controlled growth process and rigorous surface examination contribute to minimising defect density.

In the broader context of materials science, substrates like these provide a stable platform for deposition of thin films and fabrication of semiconductor components. The emphasis on crystallographic orientation and dimensional precision supports advancements in research and production, enabling higher performance and integration in electronic systems.