AL10259 Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.1 mm

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.1 mm Description

This product is a wafer made from Al2O3, featuring a precise C-plane (0001) orientation and dimensions of 10x10 mm with a thickness of 0.1 mm. The controlled crystallographic alignment ensures minimal surface defect density and uniform flatness, which is essential for semiconductor processing and analytical applications. Its composition and structural regularity offer a stable platform for various thin-film deposition and microelectronic fabrication processes.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.1 mm Applications

1.      
Electronics and Semiconductor Processing
- Used as a substrate in epitaxial film growth for semiconductor devices to achieve uniform layer deposition by leveraging its smooth C-plane surface.
- Applied as an insulating platform in microelectronic circuits to minimise dielectric interference by utilising its high chemical purity and consistent crystallinity.

2.      
Industrial Sensor and Optical Systems
- Serves as a testing base for optical sensors to validate light transmission properties by capitalising on its excellent surface flatness.
- Frequently used as a calibration standard in precision optical instruments to achieve accurate measurements by benefiting from its controlled thickness and composition.

Sapphire Wafer Al2O3 C-plane (0001) 10x10x0.1 mm Packing

The wafer is packaged individually in an anti-static enclosure and secured within a foam-lined box to mitigate mechanical damage during transit. Each unit is sealed in a moisture-resistant bag to prevent contamination and oxidation. The packaging is designed to maintain a controlled environment, preserving the wafer's dimensional tolerances and surface quality until ready for application. Custom labelling and compartmentalised packaging options are available upon request.

Frequently Asked Questions

Q1: How is the (0001) crystallographic orientation verified?
A1: The orientation is confirmed using high-resolution X-ray diffraction as well as electron backscatter diffraction. These techniques accurately measure the alignment and ensure that the wafer meets required flatness and defect density specifications.

Q2: What cleaning and handling procedures are recommended before processing?
A2: It is advisable to rinse the wafer in high-purity solvents, followed by DI water, and dry it using filtered nitrogen. Handling with clean-room gloves and tools is essential to avoid particle contamination and preserve the surface integrity.

Q3: How is dimensional consistency maintained during production?
A3: Dimensional consistency is monitored through in-line optical inspection and micrometer-based measurements. This process ensures that each wafer conforms to the 10x10 mm size and 0.1 mm thickness tolerances required for semiconductor processing applications.

Additional Information

Sapphire wafers, composed of aluminium oxide, are extensively used in microelectronic and optoelectronic applications due to their chemical inertness and thermal stability. The intrinsic properties of Al2O3, paired with a precisely controlled C-plane orientation, provide a dependable platform for research and industrial fabrication processes.

Understanding the physical and chemical behaviour of sapphire substrates assists material scientists in optimising device performance. Analytical methods such as X-ray diffraction and electron microscopy offer insights into the microstructure, enabling accurate predictions of performance in high-precision environments.