AL10260 Sapphire Wafer Al2O3 C-plane (0001) 0.5 inch x 0.5 inch x 0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) 0.5 inch x 0.5 inch x 0.5 mm Description

The wafer is an aluminium oxide (Al2O3) substrate with a (0001) C-plane orientation. Its dimensions of 0.5 inch by 0.5 inch and a thickness of 0.5 mm allow integration with standard semiconductor processing tools. The controlled crystallographic alignment is essential for achieving uniform surfaces and low defect density. The inherent chemical inertness and structural stability of Al2O3 make this wafer an effective insulating barrier in advanced electronic and optical device applications.

Sapphire Wafer Al2O3 C-plane (0001) 0.5 inch x 0.5 inch x 0.5 mm Applications

Electronics
- Used as a substrate in semiconductor devices to achieve consistent electrical insulation by leveraging a controlled (0001) crystallographic orientation.
- Applied as a dielectric barrier in microelectronic circuits to minimise signal interference by utilising a uniformly smooth surface.

Optical and Industrial
- Used as an optical window in LED systems to achieve stable light transmission by leveraging the material’s high chemical inertness.
- Applied as a component in sensor housings to attain thermal stability under fluctuating operational conditions by utilising Al2O3’s strong structural properties.

Sapphire Wafer Al2O3 C-plane (0001) 0.5 inch x 0.5 inch x 0.5 mm Packing

Each wafer is individually packaged in an anti-static, dust-controlled container with cushioned foam inserts. The product is sealed in moisture-resistant, vacuum-sealed pouches and shipped in temperature-regulated packaging to minimise contamination and mechanical stress. Wafers must be stored in a dry, low-humidity environment. Custom packaging solutions, including specific labeling and compartmentalisation, are available upon request.

Frequently Asked Questions

Q1: How is the C-plane (0001) orientation verified for these wafers?
A1: The wafer’s orientation is confirmed using X-ray diffraction (XRD) analysis, which provides a detailed examination of the crystallographic structure. This method ensures that the alignment meets the strict criteria necessary for downstream semiconductor processes.

Q2: What handling precautions are recommended during storage?
A2: The wafers should be kept in a temperature and humidity-controlled environment with anti-static packaging. Utilising moisture-resistant, cushioned containers minimises contamination risk and physical stress, thereby preserving the integrity of the substrate over time.

Q3: Are modifications available to meet specific research demands?
A3: Customisation options regarding wafer dimensions and surface treatments are available. Any requested modification undergoes controlled processing and detailed surface inspections, facilitating compatibility with varied experimental setups and fabrication processes.

Additional Information

Sapphire wafers are derived from high-purity aluminium oxide (Al2O3) and are characterised by their ordered crystallographic structure, which minimises defect density and enhances thermal stability. These substrates are integral in applications where precise insulation and minimal contamination are imperative.

In broader materials science, Al2O3 substrates play a crucial role in semiconductor and optical device fabrication. Their use extends to research settings where consistent surface properties and controlled crystallography significantly influence device performance and reliability.