AL10261 Sapphire Wafer Al2O3 C-plane (0001) 0.25 inch x 0.25 inch x 0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) 0.25 inch x 0.25 inch x 0.5 mm Description

Sapphire Wafer Al2O3 C-plane (0001) 0.25 inch x 0.25 inch x 0.5 mm is a semiconductor substrate composed of high-purity aluminium oxide (Al2O3). The C-plane (0001) orientation offers a uniform surface topology, which is critical for epitaxial film deposition. Its dimensions, 0.25 inches by 0.25 inches with a thickness of 0.5 mm, ensure compatibility with standard processing equipment. This controlled crystallographic structure aids in minimising defect density during device manufacturing.

Sapphire Wafer Al2O3 C-plane (0001) 0.25 inch x 0.25 inch x 0.5 mm Applications

1.       Electronics and Semiconductor Applications
   - Used as a substrate in LED arrays to achieve uniform epitaxial film growth by leveraging its consistent C-plane orientation.
   - Applied as a base layer in RF circuits to decrease signal loss by utilising its low defect density and stable chemical composition.

2.       Optoelectronic Applications
   - Used as a window material in optical sensors to achieve stable light transmission by leveraging its homogeneous surface morphology.
   - Applied as a substrate for laser diode fabrication to enhance emission stability by capitalising on its controlled crystallographic properties.

3.       Industrial Applications
   - Used as a component in high-temperature sensors to achieve performance stability by leveraging its chemical inertness.
   - Applied as a supporting substrate in precision instrumentation to ensure accurate measurement outcomes by utilising its minimal defect propagation.

Sapphire Wafer Al2O3 C-plane (0001) 0.25 inch x 0.25 inch x 0.5 mm Packing

Each wafer is individually packaged in an anti-static carrier with integrated foam cushioning to prevent mechanical damage and contamination. The wafer is sealed in moisture-resistant, contamination-controlled pouches and stored under clean-room conditions. Packaging is designed to maintain ambient temperature and controlled humidity levels. Custom labelling and container options are also available to suit specific handling requirements.

Frequently Asked Questions

Q1: How is the C-plane (0001) orientation verified in these wafers?
A1: The C-plane orientation is confirmed using high-resolution X-ray diffraction (XRD) analysis. This technique ensures that the crystallographic alignment meets the stringent requirements necessary for uniform film deposition in semiconductor processing.

Q2: What quality control measures are applied during wafer fabrication?
A2: The fabrication process involves advanced optical inspection and spectroscopic analysis to verify surface flatness and chemical composition. These measures help in identifying deviations early and ensure that the wafer maintains the required crystallographic and compositional consistency.

Q3: Are the wafer dimensions compatible with standard processing equipment?
A3: Yes, the wafer dimensions of 0.25 inches by 0.25 inches with a thickness of 0.5 mm are engineered for compatibility with existing semiconductor fabrication tools. This facilitates integration into various epitaxial growth and device fabrication processes.

Additional Information

Sapphire substrates made of aluminium oxide are widely utilised in both semiconductor and optoelectronic applications due to their excellent thermal and chemical stability. Their inherent hardness and minimal reactivity make them suitable for environments requiring durable, inert materials resistant to high temperatures and aggressive chemicals.

Understanding crystallographic orientations in sapphire wafers is crucial for optimising the deposition of thin films and epitaxial layers. The C-plane (0001) alignment is specifically favoured in many applications because it promotes uniformity and reduces defect propagation during high-temperature processing. This knowledge plays an important role in material selection and process development in advanced electronics manufacturing.