AL10263 Sapphire Wafer Al2O3 M Plane (10-10) 10x10x0.5 mm

Sapphire Wafer Al2O3 M Plane (10-10) 10x10x0.5 mm Description

This single crystal sapphire wafer, composed of aluminium oxide (Al2O3, CAS Number: 1344-28-1), is precision-cut along the M plane (10-10) with dimensions of 10 mm x 10 mm and a thickness of 0.5 mm. The defined crystallographic orientation ensures uniform physical and optical properties crucial for semiconductor manufacturing and other substrate applications. The controlled processing techniques minimise microdefects, making it suitable for research and industrial use.

Sapphire Wafer Al2O3 M Plane (10-10) 10x10x0.5 mm Applications

Electronics Applications
- Used as a substrate in semiconductor devices to achieve stable dielectric properties by leveraging its precise dimensional tolerances.
- Applied as a base material in LED and laser systems to ensure uniform light transmission by leveraging its atomically smooth M plane surface.

Industrial Applications
- Employed in sensor modules to deliver consistent performance by leveraging its defined crystallographic properties.
- Used as a window component in optical devices to minimise scattering by leveraging sapphire's chemical inertness and thermal stability.

Sapphire Wafer Al2O3 M Plane (10-10) 10x10x0.5 mm Packing

The wafer is individually wrapped in an anti-static material with foam inserts to absorb shock and prevent mechanical damage. It is then sealed in a clean, moisture-resistant container with a desiccant to control humidity. The packaging is designed to minimise contamination during transit and storage. Custom packaging options, including vacuum sealing and specialised labeling, are available based on specific user requirements.

Frequently Asked Questions

Q1: What are the typical surface flatness tolerances for this wafer?
A1: The wafer is processed to achieve surface flatness within a few micrometers. Interferometric measurements are used to evaluate the flatness, ensuring that the substrate meets the stringent requirements for lithographic and precision applications.

Q2: Can the crystallographic orientation consistency be assured across the entire batch?
A2: Yes, each wafer undergoes X-ray diffraction analysis to confirm the uniformity of the M plane (10-10) orientation. This quality control step verifies that the entire batch maintains consistent crystallographic properties essential for high-precision processes.

Q3: How does the packaging prevent contamination and damage?
A3: The wafers are individually sealed in anti-static wraps and cushioned with foam inserts. The moisture-resistant container, along with desiccants, minimises the risk of contamination and mechanical stress during transit and storage, preserving the wafer's surface integrity.

Additional Information

Aluminium oxide (Al2O3) is valued in materials science for its high hardness, chemical inertness, and thermal conductivity. When processed into single-crystal sapphire wafers, these properties are optimised to provide reliable substrates for electronic and optical applications. The precise crystallographic orientation achieved through advanced cutting methods is essential for ensuring uniform physical and electronic behaviours in various high-demand applications.

Advances in crystal growth and wafer processing have improved control over defect densities and surface finishes. Understanding the relationship between crystal orientation and functional performance is critical in the semiconductor and optoelectronics industries. This knowledge assists material scientists and engineers in selecting substrates that meet specific performance criteria for both research and industrial applications.